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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
NTUD3128NT5G NTUD3128NT5G ON Semiconductor MOSFET 2N-CH 20V 0.16A SOT-963
NTUD3129PT5G NTUD3129PT5G ON Semiconductor MOSFET 2P-CH 20V 0.14A SOT-963
NTZD3154NT2G NTZD3154NT2G ON Semiconductor MOSFET 2N-CH 20V 0.54A SOT563
NTZD5110NT5G NTZD5110NT5G ON Semiconductor MOSFET 2N-CH 60V 0.294A SOT563
NTGD3133PT1G NTGD3133PT1G ON Semiconductor MOSFET 2P-CH 20V 1.6A 6TSOP
NTJD4001NT2G NTJD4001NT2G ON Semiconductor MOSFET 2N-CH 30V 0.25A SOT363
NTGD3149CT1G NTGD3149CT1G ON Semiconductor MOSFET N/P-CH 20V 6-TSOP
NTLJD2104PTAG NTLJD2104PTAG ON Semiconductor MOSFET 2P-CH 12V 2.4A 6WDFN
NTLJD2104PTBG NTLJD2104PTBG ON Semiconductor MOSFET 2P-CH 12V 2.4A 6WDFN
MMDF3N04HDR2G MMDF3N04HDR2G ON Semiconductor MOSFET 2N-CH 40V 3.4A 8-SOIC
MMDF3N04HDR2G MMDF3N04HDR2G ON Semiconductor MOSFET 2N-CH 40V 3.4A 8-SOIC
MMDF3N04HDR2G MMDF3N04HDR2G ON Semiconductor MOSFET 2N-CH 40V 3.4A 8-SOIC
NTUD3171PZT5G NTUD3171PZT5G ON Semiconductor MOSFET 2P-CH 20V 0.2A SOT-963
NTZD3156CT1G NTZD3156CT1G ON Semiconductor MOSFET N/P-CH 20V SOT-563
NTZD3156CT2G NTZD3156CT2G ON Semiconductor MOSFET N/P-CH 20V SOT-563
NTZD3156CT5G NTZD3156CT5G ON Semiconductor MOSFET N/P-CH 20V SOT-563
NTLJD3181PZTAG NTLJD3181PZTAG ON Semiconductor MOSFET 2P-CH 20V 2.2A 6WDFN
NTLJD3181PZTBG NTLJD3181PZTBG ON Semiconductor MOSFET 2P-CH 20V 2.2A 6WDFN
NTLJD3183CZTAG NTLJD3183CZTAG ON Semiconductor MOSFET N/P-CH 20V 6WDFN
NTLJD3183CZTBG NTLJD3183CZTBG ON Semiconductor MOSFET N/P-CH 20V 6WDFN
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