中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 159160161162163164165166167168169 274
PDF 缩略图 器件名称 制造商 描述
NTHD2102PT1G NTHD2102PT1G ON Semiconductor MOSFET 2P-CH 8V 3.4A CHIPFET
NTHD2102PT1G NTHD2102PT1G ON Semiconductor MOSFET 2P-CH 8V 3.4A CHIPFET
NTHD4401PT1G NTHD4401PT1G ON Semiconductor MOSFET 2P-CH 20V 2.1A CHIPFET
NTHD4401PT1G NTHD4401PT1G ON Semiconductor MOSFET 2P-CH 20V 2.1A CHIPFET
NTHD5903T1G NTHD5903T1G ON Semiconductor MOSFET 2P-CH 20V 2.2A CHIPFET
NTHD5903T1G NTHD5903T1G ON Semiconductor MOSFET 2P-CH 20V 2.2A CHIPFET
NTLGD3502NT1G NTLGD3502NT1G ON Semiconductor MOSFET 2N-CH 20V 4.3A/3.6A 6DFN
NTLGD3502NT1G NTLGD3502NT1G ON Semiconductor MOSFET 2N-CH 20V 4.3A/3.6A 6DFN
NTLTD7900ZR2G NTLTD7900ZR2G ON Semiconductor MOSFET 2N-CH 20V 6A 8MICRO
NTLTD7900ZR2G NTLTD7900ZR2G ON Semiconductor MOSFET 2N-CH 20V 6A 8MICRO
ECH8619-TL-E ECH8619-TL-E ON Semiconductor MOSFET N/P-CH 60V 3A/2A ECH8
ECH8619-TL-E ECH8619-TL-E ON Semiconductor MOSFET N/P-CH 60V 3A/2A ECH8
ECH8619-TL-E ECH8619-TL-E ON Semiconductor MOSFET N/P-CH 60V 3A/2A ECH8
NTLUD3191PZTBG NTLUD3191PZTBG ON Semiconductor MOSFET 2P-CH 20V 1.1A 6UDFN
NTLUD3191PZTAG NTLUD3191PZTAG ON Semiconductor MOSFET 2P-CH 20V 1.1A 6UDFN
NTJD3158CT2G NTJD3158CT2G ON Semiconductor MOSFET N/P-CH 20V SC88-6
NTMD6601NR2G NTMD6601NR2G ON Semiconductor MOSFET 2N-CH 80V 1.1A 8SOIC
NTLJD3119CTAG NTLJD3119CTAG ON Semiconductor MOSFET N/P-CH 20V 6WDFN
NTLJD3119CTAG NTLJD3119CTAG ON Semiconductor MOSFET N/P-CH 20V 6WDFN
NTLJD3119CTAG NTLJD3119CTAG ON Semiconductor MOSFET N/P-CH 20V 6WDFN
1... 159160161162163164165166167168169 274