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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
FW282-TL-E FW282-TL-E ON Semiconductor MOSFET 2N-CH 35V 6A 8SOP
FW707-TL-E FW707-TL-E ON Semiconductor MOSFET 2P-CH 30V 8A 8SOP
FW813-TL-H FW813-TL-H ON Semiconductor MOSFET 2N-CH 60V 5A 8SOP
FW906-TL-E FW906-TL-E ON Semiconductor MOSFET N/P-CH 30V 8A/6A 8SOP
FW907-TL-E FW907-TL-E ON Semiconductor MOSFET N/P-CH 30V 10A/8A 8SOP
FW274-TL-E FW274-TL-E ON Semiconductor MOSFET 2N-CH 30V 6A 8SOP
FW811-TL-E FW811-TL-E ON Semiconductor MOSFET 2N-CH 35V 8A 8SOP
FW812-TL-E FW812-TL-E ON Semiconductor MOSFET 2N-CH 35V 10A 8SOP
MVDF2C03HDR2G MVDF2C03HDR2G ON Semiconductor MOSFET N/P-CH 30V 4.1A/3A 8SOIC
NVMD6N03R2G NVMD6N03R2G ON Semiconductor MOSFET 2N-CH 30V 6A 8SOIC
NTMD6N04R2G NTMD6N04R2G ON Semiconductor MOSFET 2N-CH 40V 4.6A 8SOIC
NTMD6N04R2G NTMD6N04R2G ON Semiconductor MOSFET 2N-CH 40V 4.6A 8SOIC
NTMD6N04R2G NTMD6N04R2G ON Semiconductor MOSFET 2N-CH 40V 4.6A 8SOIC
EMH2411R-TL-H EMH2411R-TL-H ON Semiconductor MOSFET 2N-CH 30V 5A EMH8
NTMD5836NLR2G NTMD5836NLR2G ON Semiconductor MOSFET 2N-CH 40V 9A/5.7A SO-8FL
NTMD5836NLR2G NTMD5836NLR2G ON Semiconductor MOSFET 2N-CH 40V 9A/5.7A SO-8FL
NTMD5836NLR2G NTMD5836NLR2G ON Semiconductor MOSFET 2N-CH 40V 9A/5.7A SO-8FL
FW276-TL-2H FW276-TL-2H ON Semiconductor MOSFET 2N-CH 450V 0.7A 8SOIC
FW276-TL-2H FW276-TL-2H ON Semiconductor MOSFET 2N-CH 450V 0.7A 8SOIC
FW276-TL-2H FW276-TL-2H ON Semiconductor MOSFET 2N-CH 450V 0.7A 8SOIC
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