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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
CMKDM8005 TR CMKDM8005 TR Central Semiconductor Corp MOSFET 2P-CH 20V 0.65A SOT363
CMKDM8005 TR CMKDM8005 TR Central Semiconductor Corp MOSFET 2P-CH 20V 0.65A SOT363
CMLDM8002AG TR CMLDM8002AG TR Central Semiconductor Corp MOSFET 2P-CH 50V 0.28A SOT563
CMLDM8002AG TR CMLDM8002AG TR Central Semiconductor Corp MOSFET 2P-CH 50V 0.28A SOT563
CMLDM8002AG TR CMLDM8002AG TR Central Semiconductor Corp MOSFET 2P-CH 50V 0.28A SOT563
CWDM305ND TR13 CWDM305ND TR13 Central Semiconductor Corp MOSFET 2N-CH 30V 5.8A 8SOIC
CWDM305ND TR13 CWDM305ND TR13 Central Semiconductor Corp MOSFET 2N-CH 30V 5.8A 8SOIC
CWDM305ND TR13 CWDM305ND TR13 Central Semiconductor Corp MOSFET 2N-CH 30V 5.8A 8SOIC
CTLDM304P-M832DS TR CTLDM304P-M832DS TR Central Semiconductor Corp MOSFET 2P-CH 30V 4.2A TLM832DS
CTLDM304P-M832DS TR CTLDM304P-M832DS TR Central Semiconductor Corp MOSFET 2P-CH 30V 4.2A TLM832DS
CTLDM304P-M832DS TR CTLDM304P-M832DS TR Central Semiconductor Corp MOSFET 2P-CH 30V 4.2A TLM832DS
CTLDM303N-M832DS TR CTLDM303N-M832DS TR Central Semiconductor Corp MOSFET 2N-CH 30V 3.6A TLM832DS
CTLDM303N-M832DS TR CTLDM303N-M832DS TR Central Semiconductor Corp MOSFET 2N-CH 30V 3.6A TLM832DS
CTLDM303N-M832DS TR CTLDM303N-M832DS TR Central Semiconductor Corp MOSFET 2N-CH 30V 3.6A TLM832DS
CMRDM3575 TR CMRDM3575 TR Central Semiconductor Corp MOSFET N/P-CH 20V SOT963
CMRDM3575 TR CMRDM3575 TR Central Semiconductor Corp MOSFET N/P-CH 20V SOT963
CMRDM3575 TR CMRDM3575 TR Central Semiconductor Corp MOSFET N/P-CH 20V SOT963
CMLDM7003T TR CMLDM7003T TR Central Semiconductor Corp MOSFET 2N-CH 50V 0.28A SOT563
CMLDM7003T TR CMLDM7003T TR Central Semiconductor Corp MOSFET 2N-CH 50V 0.28A SOT563
CMLDM7003T TR CMLDM7003T TR Central Semiconductor Corp MOSFET 2N-CH 50V 0.28A SOT563
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