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厂商 包装系列FET类型电压-击穿(V(BR)GSS)漏源极电压(Vdss)不同Vds(Vgs=0)时的电流-漏极(Idss)漏极电流(Id)-最大值不同Id时的电压-截止(VGS关)不同Vds时的输入电容(Ciss)电阻-RDS(开)安装类型封装/外壳供应商器件封装功率-最大值
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PDF 缩略图 器件名称 制造商 描述
2N5116-E3 2N5116-E3 Vishay Siliconix JFET P-CH 30V TO-18
2N4392-2 2N4392-2 Vishay Siliconix MOSFET N-CH 40V .1NA TO-18
2N4393-2 2N4393-2 Vishay Siliconix MOSFET N-CH 40V .1NA TO-18
2N5114JTX02 2N5114JTX02 Vishay Siliconix JFET P-CH 30V TO-206AA
2N5114JTXL02 2N5114JTXL02 Vishay Siliconix JFET P-CH 30V TO-206AA
2N4117A-2 2N4117A-2 Vishay Siliconix MOSFET N-CH 40V 30UA TO-206AF
2N4118A-2 2N4118A-2 Vishay Siliconix MOSFET N-CH 40V 80UA TO-206AF
2N4119A-2 2N4119A-2 Vishay Siliconix MOSFET N-CH 40V 200UA TO-206AF
2N4338-2 2N4338-2 Vishay Siliconix MOSFET N-CH 50V 600UA TO-206AA
2N4339-2 2N4339-2 Vishay Siliconix MOSFET N-CH 50V 1.5MA TO-206AA
2N5115JAN02 2N5115JAN02 Vishay Siliconix JFET P-CH 30V TO-18
2N5115JTX02 2N5115JTX02 Vishay Siliconix JFET P-CH 30V TO-18
2N5116JTX02 2N5116JTX02 Vishay Siliconix JFET P-CH 30V TO-18
2N4857JTXV02 2N4857JTXV02 Vishay Siliconix JFET N-CH 40V 360MA TO-18
2N4858JTXV02 2N4858JTXV02 Vishay Siliconix JFET N-CH 40V 80MA TO-18
2N4859JTXV02 2N4859JTXV02 Vishay Siliconix JFET N-CH 30V 360MW TO-18
2N5545JTXL01 2N5545JTXL01 Vishay Siliconix JFET N-CH 50V TO-71
2N5115JTXL02 2N5115JTXL02 Vishay Siliconix JFET P-CH 30V TO-18
2N5116JTXL02 2N5116JTXL02 Vishay Siliconix JFET P-CH 30V TO-18
2N4856JTXV02 2N4856JTXV02 Vishay Siliconix MOSFET N-CH 40V 50MA TO-18
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