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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
PTFB211501E V1 PTFB211501E V1 Infineon Technologies FET RF LDMOS 150W H36248-2
PTFB211501F V1 PTFB211501F V1 Infineon Technologies FET FR LDMOS 150W H37248-2
PTFA092211EL V4 R250 PTFA092211EL V4 R250 Infineon Technologies FET RF LDMOS 220W H33288-3
PTFA092201E V4 R250 PTFA092201E V4 R250 Infineon Technologies IC FET RF LDMOS 220W H-36260-2
PTFA092201F V4 R250 PTFA092201F V4 R250 Infineon Technologies IC FET RF LDMOS 220W H-37260-2
PTFA092211EL V4 PTFA092211EL V4 Infineon Technologies FET RF LDMOS 220W H33288-2
PTFA092201E V4 PTFA092201E V4 Infineon Technologies IC FET RF LDMOS 220W H-36260-2
PTFA092201F V4 PTFA092201F V4 Infineon Technologies IC FET RF LDMOS 220W H-37260-2
PTFA211801E V5 R250 PTFA211801E V5 R250 Infineon Technologies FET RF LDMOS 180W H36260-2
PTFA192001E V4 R250 PTFA192001E V4 R250 Infineon Technologies IC FET RF LDMOS 200W H-36260-2
PTFA212001E V4 R250 PTFA212001E V4 R250 Infineon Technologies IC FET RF LDMOS 200W H-36260-2
PTFA212001F V4 R250 PTFA212001F V4 R250 Infineon Technologies IC FET RF LDMOS 200W H-37260-2
PTFA211801E V5 PTFA211801E V5 Infineon Technologies FET RF LDMOS 180W H36260-2
PTFA212001F V4 PTFA212001F V4 Infineon Technologies IC FET RF LDMOS 200W H-37260-2
PTFA192001E V4 PTFA192001E V4 Infineon Technologies IC FET RF LDMOS 200W H-36260-2
PTFA212001E V4 PTFA212001E V4 Infineon Technologies IC FET RF LDMOS 200W H-36260-2
BF 1005 E6327 BF 1005 E6327 Infineon Technologies MOSFET N-CH 8V 25MA SOT-143
BF 1005S E6327 BF 1005S E6327 Infineon Technologies MOSFET N-CH 8V 25MA SOT-143
BF 1005S E6433 BF 1005S E6433 Infineon Technologies MOSFET N-CH 8V 25MA SOT-143
BF 1005SR E6327 BF 1005SR E6327 Infineon Technologies MOSFET N-CH 8V 25MA SOT-143R
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