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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BF 1009S E6327 BF 1009S E6327 Infineon Technologies MOSFET N-CH 12V 25MA SOT-143
BF 1009SR E6327 BF 1009SR E6327 Infineon Technologies MOSFET N-CH 12V 25MA SOT-143R
BF 2030 E6814 BF 2030 E6814 Infineon Technologies MOSFET N-CH 8V 40MA SOT-143
BF 2030R E6814 BF 2030R E6814 Infineon Technologies MOSFET N-CH 8V 40MA SOT-143R
BF 2030W E6814 BF 2030W E6814 Infineon Technologies MOSFET N-CH 8V 40MA SOT-343
BF 2040R E6814 BF 2040R E6814 Infineon Technologies MOSFET N-CH 8V 40MA SOT-143R
BF 2040W E6814 BF 2040W E6814 Infineon Technologies MOSFET N-CH 8V 40MA SOT-343
BF 5030W E6327 BF 5030W E6327 Infineon Technologies MOSFET N-CH 8V 25MA SOT-343
BF 998R E6327 BF 998R E6327 Infineon Technologies MOSFET N-CH RF 12V 30MA SOT-143
BG 3123R E6327 BG 3123R E6327 Infineon Technologies MOSFET N-CH DUAL 8V SOT-363
BG 3130 E6327 BG 3130 E6327 Infineon Technologies MOSFET N-CH DUAL 8V SOT-363
BG 3130R E6327 BG 3130R E6327 Infineon Technologies MOSFET N-CH DUAL 8V SOT-363
BG 3230 E6327 BG 3230 E6327 Infineon Technologies MOSFET N-CH DUAL 8V SOT-363
BG 5130R E6327 BG 5130R E6327 Infineon Technologies MOSFET N-CH DUAL 8V SOT-363
PTF080101M V1 PTF080101M V1 Infineon Technologies IC FET RF LDMOS 10W TSSOP-10
PTF080101S V1 PTF080101S V1 Infineon Technologies IC FET RF LDMOS 10W H-32259-2
PTF180101M V1 PTF180101M V1 Infineon Technologies IC FET RF LDMOS 10W TSSOP-10
PTF180101S V1 PTF180101S V1 Infineon Technologies IC FET RF LDMOS 10W H-32259-2
PTF210101M V1 PTF210101M V1 Infineon Technologies IC FET RF LDMOS 10W TSSOP-10
PTF240101S V1 PTF240101S V1 Infineon Technologies IC FET RF LDMOS 10W H-32259-2
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