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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
PTFA041501HL V1 R250 PTFA041501HL V1 R250 Infineon Technologies IC FET RF LDMOS 150W PG-64248-2
PTFA043002E V1 PTFA043002E V1 Infineon Technologies IC FET RF LDMOS 300W H-30275-4
BF 2030W H6814 BF 2030W H6814 Infineon Technologies MOSFET N-CH 8V 40MA SOT343
BF 2030W H6824 BF 2030W H6824 Infineon Technologies MOSFET N-CH 8V 40MA SOT343
BF 5020W H6327 BF 5020W H6327 Infineon Technologies MOSFET N-CH 8V 25MA SOT343
BF 5030 E6327 BF 5030 E6327 Infineon Technologies MOSFET N-CH 8V 25MA SOT143
BF 5030R E6327 BF 5030R E6327 Infineon Technologies MOSFET N-CH 8V 25MA SOT143R
BG 3123 H6327 BG 3123 H6327 Infineon Technologies MOSFET N-CH DUAL 8V 25MA SOT363
BG 3123R H6327 BG 3123R H6327 Infineon Technologies MOSFET N-CH DUAL 8V 25MA SOT363
BG 3430R H6327 BG 3430R H6327 Infineon Technologies MOSFET N-CH DUAL 8V 25MA SOT363
BG 5120K H6327 BG 5120K H6327 Infineon Technologies MOSFET N-CH DUAL 8V 20MA SOT363
BG 5412K H6327 BG 5412K H6327 Infineon Technologies MOSFET N-CH DUAL 8V 25MA SOT363
PTFA070601E V4 PTFA070601E V4 Infineon Technologies FET RF LDMOS 60W H36265-2
PTFA070601E V4 R250 PTFA070601E V4 R250 Infineon Technologies FET RF LDMOS 60W H36265-2
PTFA071701E V4 PTFA071701E V4 Infineon Technologies FET RF LDMOS 170W H36248-2
PTFA071701E V4 R250 PTFA071701E V4 R250 Infineon Technologies FET RF LDMOS 170W H36248-2
PTFA072401EL V4 PTFA072401EL V4 Infineon Technologies FET RF LDMOS 240W H33288-2
PTFA072401EL V4 R250 PTFA072401EL V4 R250 Infineon Technologies FET RF LDMOS 240W H33288-2
PTFB191501E V1 PTFB191501E V1 Infineon Technologies FET RF LDMOS 150W H36248-2
PTFB191501E V1 R250 PTFB191501E V1 R250 Infineon Technologies FET RF LDMOS 150W H36248-2
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