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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMP2033UCB9-7 DMP2033UCB9-7 Diodes Incorporated MOSFET P-CH 20V U-WLB1515-9
DMP2033UCB9-7 DMP2033UCB9-7 Diodes Incorporated MOSFET P-CH 20V U-WLB1515-9
DMG4466SSSL-13 DMG4466SSSL-13 Diodes Incorporated MOSFET N-CH 30V 10A 8SO
DMG4466SSSL-13 DMG4466SSSL-13 Diodes Incorporated MOSFET N-CH 30V 10A 8SO
DMG4466SSSL-13 DMG4466SSSL-13 Diodes Incorporated MOSFET N-CH 30V 10A 8SO
DMN3024LSS-13 DMN3024LSS-13 Diodes Incorporated MOSFET N-CH 30V 6.4A 8SO
DMN3024LSS-13 DMN3024LSS-13 Diodes Incorporated MOSFET N-CH 30V 6.4A 8SO
DMN3024LSS-13 DMN3024LSS-13 Diodes Incorporated MOSFET N-CH 30V 6.4A 8SO
DMS3016SSS-13 DMS3016SSS-13 Diodes Incorporated MOSFET N-CH 30V 9.8A 8SO
DMS3016SSS-13 DMS3016SSS-13 Diodes Incorporated MOSFET N-CH 30V 9.8A 8SO
DMS3016SSS-13 DMS3016SSS-13 Diodes Incorporated MOSFET N-CH 30V 9.8A 8SO
DMN3025LSS-13 DMN3025LSS-13 Diodes Incorporated MOSFET N CH 30V 7.2A SO-8
DMN3025LSS-13 DMN3025LSS-13 Diodes Incorporated MOSFET N CH 30V 7.2A SO-8
DMN3025LSS-13 DMN3025LSS-13 Diodes Incorporated MOSFET N CH 30V 7.2A SO-8
DMN2114SN-7 DMN2114SN-7 Diodes Incorporated MOSFET N-CH 20V 1.2A SC59-3
DMN2114SN-7 DMN2114SN-7 Diodes Incorporated MOSFET N-CH 20V 1.2A SC59-3
DMN2114SN-7 DMN2114SN-7 Diodes Incorporated MOSFET N-CH 20V 1.2A SC59-3
DMP2540UCB9-7 DMP2540UCB9-7 Diodes Incorporated MOSFET P-CH 25V 4A UWLB1515-9
DMP2540UCB9-7 DMP2540UCB9-7 Diodes Incorporated MOSFET P-CH 25V 4A UWLB1515-9
DMP2540UCB9-7 DMP2540UCB9-7 Diodes Incorporated MOSFET P-CH 25V 4A UWLB1515-9
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