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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMP3037LSS-13 DMP3037LSS-13 Diodes Incorporated MOSFET P-CH 30V 5.8A SO-8
DMP3037LSS-13 DMP3037LSS-13 Diodes Incorporated MOSFET P-CH 30V 5.8A SO-8
DMN1045UFR4-7 DMN1045UFR4-7 Diodes Incorporated MOSFET N-CH 12V 3.2A DFN1010-3
DMN1045UFR4-7 DMN1045UFR4-7 Diodes Incorporated MOSFET N-CH 12V 3.2A DFN1010-3
DMN1045UFR4-7 DMN1045UFR4-7 Diodes Incorporated MOSFET N-CH 12V 3.2A DFN1010-3
DMN6075S-7 DMN6075S-7 Diodes Incorporated MOSFET N-CH 60V 2A SOT23-3
DMN6075S-7 DMN6075S-7 Diodes Incorporated MOSFET N-CH 60V 2A SOT23-3
DMN6075S-7 DMN6075S-7 Diodes Incorporated MOSFET N-CH 60V 2A SOT23-3
DMN25D0UFA-7B DMN25D0UFA-7B Diodes Incorporated MOSFET N-CH 25V .32A 3DFN
DMN25D0UFA-7B DMN25D0UFA-7B Diodes Incorporated MOSFET N-CH 25V .32A 3DFN
DMN25D0UFA-7B DMN25D0UFA-7B Diodes Incorporated MOSFET N-CH 25V .32A 3DFN
DMN13H750S-7 DMN13H750S-7 Diodes Incorporated MOSFET N-CH 130V 1A SOT23
DMN13H750S-7 DMN13H750S-7 Diodes Incorporated MOSFET N-CH 130V 1A SOT23
DMN13H750S-7 DMN13H750S-7 Diodes Incorporated MOSFET N-CH 130V 1A SOT23
DMN2300UFD-7 DMN2300UFD-7 Diodes Incorporated MOSFET N-CH 20V 1.73A 3UDFN
DMN2300UFD-7 DMN2300UFD-7 Diodes Incorporated MOSFET N-CH 20V 1.73A 3UDFN
DMN2300UFD-7 DMN2300UFD-7 Diodes Incorporated MOSFET N-CH 20V 1.73A 3UDFN
DMN601WK-7 DMN601WK-7 Diodes Incorporated MOSFET N-CH 60V 300MA SC70-3
DMN601WK-7 DMN601WK-7 Diodes Incorporated MOSFET N-CH 60V 300MA SC70-3
DMN601WK-7 DMN601WK-7 Diodes Incorporated MOSFET N-CH 60V 300MA SC70-3
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