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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN66D0LW-7 DMN66D0LW-7 Diodes Incorporated MOSFET N-CH 60V 0.115A SOT323
DMN66D0LW-7 DMN66D0LW-7 Diodes Incorporated MOSFET N-CH 60V 0.115A SOT323
DMN66D0LW-7 DMN66D0LW-7 Diodes Incorporated MOSFET N-CH 60V 0.115A SOT323
DMN3051LDM-7 DMN3051LDM-7 Diodes Incorporated MOSFET N-CH 30V 4A SOT26
DMN3051LDM-7 DMN3051LDM-7 Diodes Incorporated MOSFET N-CH 30V 4A SOT26
DMN3051LDM-7 DMN3051LDM-7 Diodes Incorporated MOSFET N-CH 30V 4A SOT26
DMG3413L-7 DMG3413L-7 Diodes Incorporated MOSFET P-CH 20V 3A SOT23
DMG3413L-7 DMG3413L-7 Diodes Incorporated MOSFET P-CH 20V 3A SOT23
DMG3413L-7 DMG3413L-7 Diodes Incorporated MOSFET P-CH 20V 3A SOT23
DMP1045UFY4-7 DMP1045UFY4-7 Diodes Incorporated MOSFET P-CH 12V 5.5A DFN2015-3
DMP1045UFY4-7 DMP1045UFY4-7 Diodes Incorporated MOSFET P-CH 12V 5.5A DFN2015-3
DMP1045UFY4-7 DMP1045UFY4-7 Diodes Incorporated MOSFET P-CH 12V 5.5A DFN2015-3
DMN3033LDM-7 DMN3033LDM-7 Diodes Incorporated MOSFET N-CH 30V 6.9A SOT-26
DMN3033LDM-7 DMN3033LDM-7 Diodes Incorporated MOSFET N-CH 30V 6.9A SOT-26
DMN3033LDM-7 DMN3033LDM-7 Diodes Incorporated MOSFET N-CH 30V 6.9A SOT-26
DMN2013UFDE-7 DMN2013UFDE-7 Diodes Incorporated MOSFET N-CH 20V 10.5A U-DFN
DMN2013UFDE-7 DMN2013UFDE-7 Diodes Incorporated MOSFET N-CH 20V 10.5A U-DFN
DMN2013UFDE-7 DMN2013UFDE-7 Diodes Incorporated MOSFET N-CH 20V 10.5A U-DFN
DMN10H120SFG-13 DMN10H120SFG-13 Diodes Incorporated MOSFET N-CH 100V 4.8A 8SOIC
DMN10H120SFG-13 DMN10H120SFG-13 Diodes Incorporated MOSFET N-CH 100V 4.8A 8SOIC
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