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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN53D0L-13 DMN53D0L-13 Diodes Incorporated MOSFET N-CH 50V 0.5A SOT23
DMN65D8LFB-7 DMN65D8LFB-7 Diodes Incorporated MOSFET N-CH 60V 260MA 3DFN
DMP213DUFA-7B DMP213DUFA-7B Diodes Incorporated MOSFET P-CH 25V 0.145A SOT-26
DMN33D8LT-7 DMN33D8LT-7 Diodes Incorporated MOSFET N-CH 30V 0.115A
DMN62D1LFD-13 DMN62D1LFD-13 Diodes Incorporated MOSFET N-CH 60V 0.4A DFN1212-3
DMN55D0UTQ-7 DMN55D0UTQ-7 Diodes Incorporated MOSFET N-CH 50V 160MA SOT-523
DMN55D0UTQ-7 DMN55D0UTQ-7 Diodes Incorporated MOSFET N-CH 50V 160MA SOT-523
DMN55D0UTQ-7 DMN55D0UTQ-7 Diodes Incorporated MOSFET N-CH 50V 160MA SOT-523
DMN2300UFB-7B DMN2300UFB-7B Diodes Incorporated MOSFET N-CH 20V 1.32A 3DFN
DMN62D1SFB-7B DMN62D1SFB-7B Diodes Incorporated MOSFET N-CH 60V 410MA 3DFN
BSS84WQ-7-F BSS84WQ-7-F Diodes Incorporated MOSFET P-CH 50V 130MA SOT323
BSS84WQ-7-F BSS84WQ-7-F Diodes Incorporated MOSFET P-CH 50V 130MA SOT323
BSS84WQ-7-F BSS84WQ-7-F Diodes Incorporated MOSFET P-CH 50V 130MA SOT323
DMN62D0LFB-7 DMN62D0LFB-7 Diodes Incorporated MOSFET N-CH 60V X2-DFN1006-3
DMN2501UFB4-7 DMN2501UFB4-7 Diodes Incorporated MOSFET N-CH 20V 1A 3DFN
DMN2501UFB4-7 DMN2501UFB4-7 Diodes Incorporated MOSFET N-CH 20V 1A 3DFN
DMN2501UFB4-7 DMN2501UFB4-7 Diodes Incorporated MOSFET N-CH 20V 1A 3DFN
DMS2085LSD-13 DMS2085LSD-13 Diodes Incorporated MOSFET P-CH 20V 3.3A
DMP21D0UFB-7 DMP21D0UFB-7 Diodes Incorporated MOSFET P-CH 20V 0.77A DFN1006-3
DMG301NU-7 DMG301NU-7 Diodes Incorporated MOSFET N-CH 25V .26A SOT-23
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