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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMS3016SFG-7 DMS3016SFG-7 Diodes Incorporated MOSFET N-CH 30V 7A PWRDI3333-8
DMS3016SFG-7 DMS3016SFG-7 Diodes Incorporated MOSFET N-CH 30V 7A PWRDI3333-8
DMS3016SFG-7 DMS3016SFG-7 Diodes Incorporated MOSFET N-CH 30V 7A PWRDI3333-8
DMP2047UCB4-7 DMP2047UCB4-7 Diodes Incorporated MOSFET P-CH 20V 4.1A 4UWLB
DMP2047UCB4-7 DMP2047UCB4-7 Diodes Incorporated MOSFET P-CH 20V 4.1A 4UWLB
DMP2047UCB4-7 DMP2047UCB4-7 Diodes Incorporated MOSFET P-CH 20V 4.1A 4UWLB
ZVN3320ASTOA ZVN3320ASTOA Diodes Incorporated MOSFET N-CH 200V 0.1A TO92-3
ZVN3320ASTOA ZVN3320ASTOA Diodes Incorporated MOSFET N-CH 200V 0.1A TO92-3
ZXMN10A08G ZXMN10A08G Diodes Incorporated MOSFET N-CH 100V 2A SOT223
ZXMN10A08G ZXMN10A08G Diodes Incorporated MOSFET N-CH 100V 2A SOT223
ZXMN10A08G ZXMN10A08G Diodes Incorporated MOSFET N-CH 100V 2A SOT223
DMN3052LSS-13 DMN3052LSS-13 Diodes Incorporated MOSFET N-CH 30V 7.1A 8-SOIC
DMN3052LSS-13 DMN3052LSS-13 Diodes Incorporated MOSFET N-CH 30V 7.1A 8-SOIC
DMN3052LSS-13 DMN3052LSS-13 Diodes Incorporated MOSFET N-CH 30V 7.1A 8-SOIC
DMN2600UFB-7 DMN2600UFB-7 Diodes Incorporated MOSFET N-CH 25V 1.3A DFN1006-3
DMN2600UFB-7 DMN2600UFB-7 Diodes Incorporated MOSFET N-CH 25V 1.3A DFN1006-3
DMN2600UFB-7 DMN2600UFB-7 Diodes Incorporated MOSFET N-CH 25V 1.3A DFN1006-3
DMN53D0L-7 DMN53D0L-7 Diodes Incorporated MOSFET N-CH 50V 0.5A SOT23
DMN53D0L-7 DMN53D0L-7 Diodes Incorporated MOSFET N-CH 50V 0.5A SOT23
DMN53D0L-7 DMN53D0L-7 Diodes Incorporated MOSFET N-CH 50V 0.5A SOT23
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