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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN3018SFG-13 DMN3018SFG-13 Diodes Incorporated MOSFET N-CH 30V 8.5A POWERDI
DMN3018SFG-13 DMN3018SFG-13 Diodes Incorporated MOSFET N-CH 30V 8.5A POWERDI
DMN3018SFG-13 DMN3018SFG-13 Diodes Incorporated MOSFET N-CH 30V 8.5A POWERDI
DMN3029LFG-7 DMN3029LFG-7 Diodes Incorporated MOSFET N-CH 30V 5.3A PWRDI333-8
DMN3029LFG-7 DMN3029LFG-7 Diodes Incorporated MOSFET N-CH 30V 5.3A PWRDI333-8
DMN3029LFG-7 DMN3029LFG-7 Diodes Incorporated MOSFET N-CH 30V 5.3A PWRDI333-8
ZXMN2069FTA ZXMN2069FTA Diodes Incorporated MOSFET N-CH SOT23-3
ZXMN2069FTA ZXMN2069FTA Diodes Incorporated MOSFET N-CH SOT23-3
DMN2004TK-7 DMN2004TK-7 Diodes Incorporated MOSFET N-CH 20V 0.54A SOT-523
DMN2004TK-7 DMN2004TK-7 Diodes Incorporated MOSFET N-CH 20V 0.54A SOT-523
DMN2004TK-7 DMN2004TK-7 Diodes Incorporated MOSFET N-CH 20V 0.54A SOT-523
DMN3200U-7 DMN3200U-7 Diodes Incorporated MOSFET N-CH 30V 2.2A SOT23-3
DMN3200U-7 DMN3200U-7 Diodes Incorporated MOSFET N-CH 30V 2.2A SOT23-3
DMN3200U-7 DMN3200U-7 Diodes Incorporated MOSFET N-CH 30V 2.2A SOT23-3
DMG4812SSS-13 DMG4812SSS-13 Diodes Incorporated MOSFET N-CH 30V 8A SO-8
DMG4812SSS-13 DMG4812SSS-13 Diodes Incorporated MOSFET N-CH 30V 8A SO-8
DMG4812SSS-13 DMG4812SSS-13 Diodes Incorporated MOSFET N-CH 30V 8A SO-8
NMSD200B01-7 NMSD200B01-7 Diodes Incorporated MOSFET N-CH 60V 200MA SOT363
NMSD200B01-7 NMSD200B01-7 Diodes Incorporated MOSFET N-CH 60V 200MA SOT363
NMSD200B01-7 NMSD200B01-7 Diodes Incorporated MOSFET N-CH 60V 200MA SOT363
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