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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZXMN2A01E6TA ZXMN2A01E6TA Diodes Incorporated MOSFET N-CH 20V 2.44 A SOT-23-6
ZXMN2A01E6TA ZXMN2A01E6TA Diodes Incorporated MOSFET N-CH 20V 2.44 A SOT-23-6
DMP2006UFG-7 DMP2006UFG-7 Diodes Incorporated MOSFET P-CH 20V 40A POWERDI
DMP2006UFG-7 DMP2006UFG-7 Diodes Incorporated MOSFET P-CH 20V 40A POWERDI
DMP2006UFG-7 DMP2006UFG-7 Diodes Incorporated MOSFET P-CH 20V 40A POWERDI
ZVN0124A ZVN0124A Diodes Incorporated MOSFET N-CH 240V 0.16A TO92-3
ZVN4306GVTA ZVN4306GVTA Diodes Incorporated MOSFET N-CH 60V 2.1A SOT223
ZVN4306GVTA ZVN4306GVTA Diodes Incorporated MOSFET N-CH 60V 2.1A SOT223
ZVN4306GVTA ZVN4306GVTA Diodes Incorporated MOSFET N-CH 60V 2.1A SOT223
ZXMN2B03E6TA ZXMN2B03E6TA Diodes Incorporated MOSFET N-CH 20V 4.3A SOT23-6
ZXMN2B03E6TA ZXMN2B03E6TA Diodes Incorporated MOSFET N-CH 20V 4.3A SOT23-6
ZXMN2B03E6TA ZXMN2B03E6TA Diodes Incorporated MOSFET N-CH 20V 4.3A SOT23-6
ZXMP10A13FQTA ZXMP10A13FQTA Diodes Incorporated MOSFET P-CH 100V 0.6A SOT23-3
ZXMP10A13FQTA ZXMP10A13FQTA Diodes Incorporated MOSFET P-CH 100V 0.6A SOT23-3
ZXMP10A13FQTA ZXMP10A13FQTA Diodes Incorporated MOSFET P-CH 100V 0.6A SOT23-3
DMP6023LFG-7 DMP6023LFG-7 Diodes Incorporated MOSFET P-CH 60V 7.7A POWERDI3333
DMP6023LFG-7 DMP6023LFG-7 Diodes Incorporated MOSFET P-CH 60V 7.7A POWERDI3333
DMP6023LFG-7 DMP6023LFG-7 Diodes Incorporated MOSFET P-CH 60V 7.7A POWERDI3333
ZVN0545A ZVN0545A Diodes Incorporated MOSFET N-CH 450V 0.09A TO92-3
ZXM66P02N8TA ZXM66P02N8TA Diodes Incorporated MOSFET P-CH 20V 8A 8-SOIC
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