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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMT5015LFDF-7 DMT5015LFDF-7 Diodes Incorporated MOSFET N-CH 50V 9.1A 6DFN
DMT5015LFDF-7 DMT5015LFDF-7 Diodes Incorporated MOSFET N-CH 50V 9.1A 6DFN
DMT5015LFDF-7 DMT5015LFDF-7 Diodes Incorporated MOSFET N-CH 50V 9.1A 6DFN
DMN2028USS-13 DMN2028USS-13 Diodes Incorporated MOSFET N-CH 20V 7.3A 8SO
DMN2028USS-13 DMN2028USS-13 Diodes Incorporated MOSFET N-CH 20V 7.3A 8SO
DMN2028USS-13 DMN2028USS-13 Diodes Incorporated MOSFET N-CH 20V 7.3A 8SO
DMP1245UFCL-7 DMP1245UFCL-7 Diodes Incorporated MOSFET P-CH 12V 6.6A 6-UFDFN
DMP1245UFCL-7 DMP1245UFCL-7 Diodes Incorporated MOSFET P-CH 12V 6.6A 6-UFDFN
DMP1245UFCL-7 DMP1245UFCL-7 Diodes Incorporated MOSFET P-CH 12V 6.6A 6-UFDFN
DMN10H220LE-13 DMN10H220LE-13 Diodes Incorporated MOSFET N-CH 100V 2.3A SOT223
DMN10H220LE-13 DMN10H220LE-13 Diodes Incorporated MOSFET N-CH 100V 2.3A SOT223
DMN10H220LE-13 DMN10H220LE-13 Diodes Incorporated MOSFET N-CH 100V 2.3A SOT223
ZXMN3A01E6TA ZXMN3A01E6TA Diodes Incorporated MOSFET N-CH 30V 2.4A SOT-23-6
ZXMN3A01E6TA ZXMN3A01E6TA Diodes Incorporated MOSFET N-CH 30V 2.4A SOT-23-6
DMN4015LK3-13 DMN4015LK3-13 Diodes Incorporated MOSFET N-CH 40V 13.5A DPAK
DMN4015LK3-13 DMN4015LK3-13 Diodes Incorporated MOSFET N-CH 40V 13.5A DPAK
DMN4015LK3-13 DMN4015LK3-13 Diodes Incorporated MOSFET N-CH 40V 13.5A DPAK
DMN4034SSS-13 DMN4034SSS-13 Diodes Incorporated MOSFET N-CH 40V 5.4A 8SO
DMN4034SSS-13 DMN4034SSS-13 Diodes Incorporated MOSFET N-CH 40V 5.4A 8SO
DMN4034SSS-13 DMN4034SSS-13 Diodes Incorporated MOSFET N-CH 40V 5.4A 8SO
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