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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMP2066LSN-7 DMP2066LSN-7 Diodes Incorporated MOSFET P-CH 20V 4.6A SC59-3
DMP2066LSN-7 DMP2066LSN-7 Diodes Incorporated MOSFET P-CH 20V 4.6A SC59-3
DMN3024LK3-13 DMN3024LK3-13 Diodes Incorporated MOSFET N-CH 30V 9.78A DPAK
DMN3024LK3-13 DMN3024LK3-13 Diodes Incorporated MOSFET N-CH 30V 9.78A DPAK
DMN3024LK3-13 DMN3024LK3-13 Diodes Incorporated MOSFET N-CH 30V 9.78A DPAK
DMP3056LSS-13 DMP3056LSS-13 Diodes Incorporated MOSFET P-CH 30V 7.1A 8-SOIC
DMP3056LSS-13 DMP3056LSS-13 Diodes Incorporated MOSFET P-CH 30V 7.1A 8-SOIC
DMP3056LSS-13 DMP3056LSS-13 Diodes Incorporated MOSFET P-CH 30V 7.1A 8-SOIC
DMP6110SSS-13 DMP6110SSS-13 Diodes Incorporated MOSFET P-CH 60V 8SOIC
DMP6110SSS-13 DMP6110SSS-13 Diodes Incorporated MOSFET P-CH 60V 8SOIC
DMP6110SSS-13 DMP6110SSS-13 Diodes Incorporated MOSFET P-CH 60V 8SOIC
DMG7702SFG-7 DMG7702SFG-7 Diodes Incorporated MOSFET N-CH 30V 12A PWRDI3333-8
DMG7702SFG-7 DMG7702SFG-7 Diodes Incorporated MOSFET N-CH 30V 12A PWRDI3333-8
DMG7702SFG-7 DMG7702SFG-7 Diodes Incorporated MOSFET N-CH 30V 12A PWRDI3333-8
DMG7401SFG-7 DMG7401SFG-7 Diodes Incorporated MOSFET P-CH 30V 9.8A POWERDI3333
DMG7401SFG-7 DMG7401SFG-7 Diodes Incorporated MOSFET P-CH 30V 9.8A POWERDI3333
DMG7401SFG-7 DMG7401SFG-7 Diodes Incorporated MOSFET P-CH 30V 9.8A POWERDI3333
DMG4468LK3-13 DMG4468LK3-13 Diodes Incorporated MOSFET N-CH 30V 9.7A TO252
DMG4468LK3-13 DMG4468LK3-13 Diodes Incorporated MOSFET N-CH 30V 9.7A TO252
DMG4468LK3-13 DMG4468LK3-13 Diodes Incorporated MOSFET N-CH 30V 9.7A TO252
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