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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMP4015SSSQ-13 DMP4015SSSQ-13 Diodes Incorporated MOSFET P-CH 40V 9.1A SO-8
DMP4015SSSQ-13 DMP4015SSSQ-13 Diodes Incorporated MOSFET P-CH 40V 9.1A SO-8
ZVP4424A ZVP4424A Diodes Incorporated MOSFET P-CH 240V 0.2A TO92-3
ZVN4306A ZVN4306A Diodes Incorporated MOSFET N-CH 60V 1.1A TO92-3
ZVN4306AV ZVN4306AV Diodes Incorporated MOSFET N-CH 60V 1.1A TO92-3
ZVN4310A ZVN4310A Diodes Incorporated MOSFET N-CH 100V 0.9A TO92-3
DMP210DUFB4-7 DMP210DUFB4-7 Diodes Incorporated MOSFET P-CH 20V 0.2A X2-DFN1006
DMP210DUFB4-7 DMP210DUFB4-7 Diodes Incorporated MOSFET P-CH 20V 0.2A X2-DFN1006
DMP210DUFB4-7 DMP210DUFB4-7 Diodes Incorporated MOSFET P-CH 20V 0.2A X2-DFN1006
DMN2400UFB-7 DMN2400UFB-7 Diodes Incorporated MOSFET N-CH 20V 750MA 3DFN
DMN2400UFB-7 DMN2400UFB-7 Diodes Incorporated MOSFET N-CH 20V 750MA 3DFN
DMN2400UFB-7 DMN2400UFB-7 Diodes Incorporated MOSFET N-CH 20V 750MA 3DFN
DMN2500UFB4-7 DMN2500UFB4-7 Diodes Incorporated MOSFET N-CH 20V 810A 3DFN
DMN2500UFB4-7 DMN2500UFB4-7 Diodes Incorporated MOSFET N-CH 20V 810A 3DFN
DMN2500UFB4-7 DMN2500UFB4-7 Diodes Incorporated MOSFET N-CH 20V 810A 3DFN
DMN62D1LFD-7 DMN62D1LFD-7 Diodes Incorporated MOSFET N-CH 60V 0.4A DFN1212-3
DMN62D1LFD-7 DMN62D1LFD-7 Diodes Incorporated MOSFET N-CH 60V 0.4A DFN1212-3
DMN62D1LFD-7 DMN62D1LFD-7 Diodes Incorporated MOSFET N-CH 60V 0.4A DFN1212-3
DMN62D0SFD-7 DMN62D0SFD-7 Diodes Incorporated MOSFET N-CH 60V 540MA 3-DFN
DMN62D0SFD-7 DMN62D0SFD-7 Diodes Incorporated MOSFET N-CH 60V 540MA 3-DFN
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