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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZXMN10A07FTA ZXMN10A07FTA Diodes Incorporated MOSFET N-CH 100V 700MA SOT23-3
ZXMN10A07FTA ZXMN10A07FTA Diodes Incorporated MOSFET N-CH 100V 700MA SOT23-3
ZXMN10A07FTA ZXMN10A07FTA Diodes Incorporated MOSFET N-CH 100V 700MA SOT23-3
DMN32D2LFB4-7 DMN32D2LFB4-7 Diodes Incorporated MOSFET N-CH 30V 300MA 3-DFN
DMN32D2LFB4-7 DMN32D2LFB4-7 Diodes Incorporated MOSFET N-CH 30V 300MA 3-DFN
DMN32D2LFB4-7 DMN32D2LFB4-7 Diodes Incorporated MOSFET N-CH 30V 300MA 3-DFN
DMP1022UFDE-7 DMP1022UFDE-7 Diodes Incorporated MOSFET P-CH 12V 9.1A 6UDFN
DMP1022UFDE-7 DMP1022UFDE-7 Diodes Incorporated MOSFET P-CH 12V 9.1A 6UDFN
DMP1022UFDE-7 DMP1022UFDE-7 Diodes Incorporated MOSFET P-CH 12V 9.1A 6UDFN
DMP3160L-7 DMP3160L-7 Diodes Incorporated MOSFET P-CH 30V 2.7A SOT23-3
DMP3160L-7 DMP3160L-7 Diodes Incorporated MOSFET P-CH 30V 2.7A SOT23-3
DMP3160L-7 DMP3160L-7 Diodes Incorporated MOSFET P-CH 30V 2.7A SOT23-3
DMP2018LFK-7 DMP2018LFK-7 Diodes Incorporated MOSFET P-CH 20V 9.2A 6-DFN
DMP2018LFK-7 DMP2018LFK-7 Diodes Incorporated MOSFET P-CH 20V 9.2A 6-DFN
DMP2018LFK-7 DMP2018LFK-7 Diodes Incorporated MOSFET P-CH 20V 9.2A 6-DFN
ZVN3320FTA ZVN3320FTA Diodes Incorporated MOSFET N-CH 200V 60MA SOT23-3
ZVN3320FTA ZVN3320FTA Diodes Incorporated MOSFET N-CH 200V 60MA SOT23-3
ZVN3320FTA ZVN3320FTA Diodes Incorporated MOSFET N-CH 200V 60MA SOT23-3
DMN1019UFDE-7 DMN1019UFDE-7 Diodes Incorporated MOSFET N CH 12V 11A U-DFN2020-6E
DMN1019UFDE-7 DMN1019UFDE-7 Diodes Incorporated MOSFET N CH 12V 11A U-DFN2020-6E
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