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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZXM61P02FTA ZXM61P02FTA Diodes Incorporated MOSFET P-CH 20V 0.9A SOT23-3
ZXM61P02FTA ZXM61P02FTA Diodes Incorporated MOSFET P-CH 20V 0.9A SOT23-3
DMN2300U-7 DMN2300U-7 Diodes Incorporated MOSFET N-CH 20V 1.24A SOT23
DMN2300U-7 DMN2300U-7 Diodes Incorporated MOSFET N-CH 20V 1.24A SOT23
DMN2300U-7 DMN2300U-7 Diodes Incorporated MOSFET N-CH 20V 1.24A SOT23
DMN3730U-7 DMN3730U-7 Diodes Incorporated MOSFET N-CH 30V 750MA SOT23
DMN3730U-7 DMN3730U-7 Diodes Incorporated MOSFET N-CH 30V 750MA SOT23
DMN3730U-7 DMN3730U-7 Diodes Incorporated MOSFET N-CH 30V 750MA SOT23
DMN3150LW-7 DMN3150LW-7 Diodes Incorporated MOSFET N-CH 28V 1.6A SC70-3
DMN3150LW-7 DMN3150LW-7 Diodes Incorporated MOSFET N-CH 28V 1.6A SC70-3
DMN3150LW-7 DMN3150LW-7 Diodes Incorporated MOSFET N-CH 28V 1.6A SC70-3
ZXMN2F30FHTA ZXMN2F30FHTA Diodes Incorporated MOSFET N-CH 20V 4.1A SOT23-3
ZXMN2F30FHTA ZXMN2F30FHTA Diodes Incorporated MOSFET N-CH 20V 4.1A SOT23-3
ZXMN2F30FHTA ZXMN2F30FHTA Diodes Incorporated MOSFET N-CH 20V 4.1A SOT23-3
ZXMN3F30FHTA ZXMN3F30FHTA Diodes Incorporated MOSFET N-CH 30V 3.8A SOT23-3
ZXMN3F30FHTA ZXMN3F30FHTA Diodes Incorporated MOSFET N-CH 30V 3.8A SOT23-3
ZXMN3F30FHTA ZXMN3F30FHTA Diodes Incorporated MOSFET N-CH 30V 3.8A SOT23-3
DMP2066LDM-7 DMP2066LDM-7 Diodes Incorporated MOSFET P-CH 20V 4.6A SOT-26
DMP2066LDM-7 DMP2066LDM-7 Diodes Incorporated MOSFET P-CH 20V 4.6A SOT-26
DMP2066LDM-7 DMP2066LDM-7 Diodes Incorporated MOSFET P-CH 20V 4.6A SOT-26
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