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厂商 包装系列FET类型FET功能漏源极电压（Vdss）电流-连续漏极（Id）（25°C时）不同Id，Vgs时的RdsOn（最大值）不同Id时的Vgs（th）（最大值）不同Vgs时的栅极电荷（Qg）不同Vds时的输入电容（Ciss）功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMG1013UW-7 DMG1013UW-7 Diodes Incorporated MOSFET P-CH 20V 820MA SOT323
DMG1013UW-7 DMG1013UW-7 Diodes Incorporated MOSFET P-CH 20V 820MA SOT323
DMG1013UW-7 DMG1013UW-7 Diodes Incorporated MOSFET P-CH 20V 820MA SOT323
DMN2300UFB4-7B DMN2300UFB4-7B Diodes Incorporated MOSFET N-CH 20V 1.3A 3DFN
DMN2300UFB4-7B DMN2300UFB4-7B Diodes Incorporated MOSFET N-CH 20V 1.3A 3DFN
DMN2300UFB4-7B DMN2300UFB4-7B Diodes Incorporated MOSFET N-CH 20V 1.3A 3DFN
DMG1012UW-7 DMG1012UW-7 Diodes Incorporated MOSFET N-CH 20V 1A SOT323
DMG1012UW-7 DMG1012UW-7 Diodes Incorporated MOSFET N-CH 20V 1A SOT323
DMG1012UW-7 DMG1012UW-7 Diodes Incorporated MOSFET N-CH 20V 1A SOT323
BSN20-7 BSN20-7 Diodes Incorporated MOSFET N-CH 50V 500MA SOT23
BSN20-7 BSN20-7 Diodes Incorporated MOSFET N-CH 50V 500MA SOT23
BSN20-7 BSN20-7 Diodes Incorporated MOSFET N-CH 50V 500MA SOT23
DMN26D0UFB4-7 DMN26D0UFB4-7 Diodes Incorporated MOSFET N-CH 20V 230MA DFN
DMN26D0UFB4-7 DMN26D0UFB4-7 Diodes Incorporated MOSFET N-CH 20V 230MA DFN
DMN26D0UFB4-7 DMN26D0UFB4-7 Diodes Incorporated MOSFET N-CH 20V 230MA DFN
BSS84-7-F BSS84-7-F Diodes Incorporated MOSFET P-CH 50V 130MA SOT23-3
BSS84-7-F BSS84-7-F Diodes Incorporated MOSFET P-CH 50V 130MA SOT23-3
BSS84-7-F BSS84-7-F Diodes Incorporated MOSFET P-CH 50V 130MA SOT23-3
2N7002W-7-F 2N7002W-7-F Diodes Incorporated MOSFET N-CH 60V 115MA SOT323
2N7002W-7-F 2N7002W-7-F Diodes Incorporated MOSFET N-CH 60V 115MA SOT323
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