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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
CMPDM7003 TR CMPDM7003 TR Central Semiconductor Corp MOSFET N-CH 50V 280MA SOT23
CMUDM8001 TR CMUDM8001 TR Central Semiconductor Corp MOSFET P-CH 20V 0.1A SOT523
CMUDM8001 TR CMUDM8001 TR Central Semiconductor Corp MOSFET P-CH 20V 0.1A SOT523
CMUDM8001 TR CMUDM8001 TR Central Semiconductor Corp MOSFET P-CH 20V 0.1A SOT523
CMUDM7005 TR CMUDM7005 TR Central Semiconductor Corp MOSFET N-CH 20V 650MA SOT523
CMUDM7005 TR CMUDM7005 TR Central Semiconductor Corp MOSFET N-CH 20V 650MA SOT523
CMUDM7005 TR CMUDM7005 TR Central Semiconductor Corp MOSFET N-CH 20V 650MA SOT523
CMUDM8005 TR CMUDM8005 TR Central Semiconductor Corp MOSFET P-CH 20V 650MA SOT523
CMUDM8005 TR CMUDM8005 TR Central Semiconductor Corp MOSFET P-CH 20V 650MA SOT523
CMUDM8005 TR CMUDM8005 TR Central Semiconductor Corp MOSFET P-CH 20V 650MA SOT523
CWDM305N TR13 CWDM305N TR13 Central Semiconductor Corp MOSFET N-CH 20V 5.8A 8SOIC
CWDM305N TR13 CWDM305N TR13 Central Semiconductor Corp MOSFET N-CH 20V 5.8A 8SOIC
CWDM305N TR13 CWDM305N TR13 Central Semiconductor Corp MOSFET N-CH 20V 5.8A 8SOIC
2N7002-G 2N7002-G Comchip Technology MOSFET N-CH 60V 0.25A SOT23
C2M1000170D C2M1000170D Cree Inc MOSFET N-CH 1700V 4.9A TO247
C2M0280120D C2M0280120D Cree Inc MOSFET N-CH 1200V 10A TO-247-3
C2M0160120D C2M0160120D Cree Inc MOSFET N-CH 1200V 17.7A TO-247
CMF10120D CMF10120D Cree Inc MOSFET N-CH 1200V 24A TO247
C2M0080120D C2M0080120D Cree Inc MOSFET N-CH 1200V 31.6A TO247
CMF20120D CMF20120D Cree Inc MOSFET N-CH 1200V 42A TO-247-3
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