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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
C2M0025120D C2M0025120D Cree Inc MOSFET N-CH 1200V 90A TO-247
C2M0040120D C2M0040120D Cree Inc MOSFET N-CH 1200V 60A TO-247
C3M0065090D C3M0065090D Cree Inc MOSFET N-CH 900V 36A TO247-3
C3M0065090J C3M0065090J Cree Inc MOSFET N-CH 900V 35A D2PAK-7
C3M0065090J-TR C3M0065090J-TR Cree Inc MOSFET N-CH 900V 35A D2PAK-7
2N7002-7-F 2N7002-7-F Diodes Incorporated MOSFET N-CH 60V 115MA SOT23-3
2N7002-7-F 2N7002-7-F Diodes Incorporated MOSFET N-CH 60V 115MA SOT23-3
2N7002-7-F 2N7002-7-F Diodes Incorporated MOSFET N-CH 60V 115MA SOT23-3
DMG2305UX-13 DMG2305UX-13 Diodes Incorporated MOSFET P-CH 20V 4.2A SOT23
DMG2305UX-13 DMG2305UX-13 Diodes Incorporated MOSFET P-CH 20V 4.2A SOT23
DMG2305UX-13 DMG2305UX-13 Diodes Incorporated MOSFET P-CH 20V 4.2A SOT23
DMG1012T-7 DMG1012T-7 Diodes Incorporated MOSFET N-CH 20V 630MA SOT-523
DMG1012T-7 DMG1012T-7 Diodes Incorporated MOSFET N-CH 20V 630MA SOT-523
DMG1012T-7 DMG1012T-7 Diodes Incorporated MOSFET N-CH 20V 630MA SOT-523
DMG1013T-7 DMG1013T-7 Diodes Incorporated MOSFET P-CH 20V 0.46A SOT-523
DMG1013T-7 DMG1013T-7 Diodes Incorporated MOSFET P-CH 20V 0.46A SOT-523
DMG1013T-7 DMG1013T-7 Diodes Incorporated MOSFET P-CH 20V 0.46A SOT-523
BSS138-7-F BSS138-7-F Diodes Incorporated MOSFET N-CH 50V 200MA SOT23-3
BSS138-7-F BSS138-7-F Diodes Incorporated MOSFET N-CH 50V 200MA SOT23-3
BSS138-7-F BSS138-7-F Diodes Incorporated MOSFET N-CH 50V 200MA SOT23-3
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