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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN1019UFDE-7 DMN1019UFDE-7 Diodes Incorporated MOSFET N CH 12V 11A U-DFN2020-6E
ZXMN3A01FTA ZXMN3A01FTA Diodes Incorporated MOSFET N-CH 30V 1.8A SOT23-3
ZXMN3A01FTA ZXMN3A01FTA Diodes Incorporated MOSFET N-CH 30V 1.8A SOT23-3
ZXMN3A01FTA ZXMN3A01FTA Diodes Incorporated MOSFET N-CH 30V 1.8A SOT23-3
ZXM61N02FTA ZXM61N02FTA Diodes Incorporated MOSFET N-CH 20V 1.7A SOT23-3
ZXM61N02FTA ZXM61N02FTA Diodes Incorporated MOSFET N-CH 20V 1.7A SOT23-3
ZXM61N02FTA ZXM61N02FTA Diodes Incorporated MOSFET N-CH 20V 1.7A SOT23-3
DMG6968U-7 DMG6968U-7 Diodes Incorporated MOSFET N-CH 20V 6.5A SOT-23
DMG6968U-7 DMG6968U-7 Diodes Incorporated MOSFET N-CH 20V 6.5A SOT-23
DMG6968U-7 DMG6968U-7 Diodes Incorporated MOSFET N-CH 20V 6.5A SOT-23
DMG3415U-7 DMG3415U-7 Diodes Incorporated MOSFET P-CH 20V 4A SOT-23
DMG3415U-7 DMG3415U-7 Diodes Incorporated MOSFET P-CH 20V 4A SOT-23
DMG3415U-7 DMG3415U-7 Diodes Incorporated MOSFET P-CH 20V 4A SOT-23
DMG3414U-7 DMG3414U-7 Diodes Incorporated MOSFET N-CH 20V 4.2A SOT23
DMG3414U-7 DMG3414U-7 Diodes Incorporated MOSFET N-CH 20V 4.2A SOT23
DMG3414U-7 DMG3414U-7 Diodes Incorporated MOSFET N-CH 20V 4.2A SOT23
DMP3056LDM-7 DMP3056LDM-7 Diodes Incorporated MOSFET P-CH 30V 4.3A SOT-26
DMP3056LDM-7 DMP3056LDM-7 Diodes Incorporated MOSFET P-CH 30V 4.3A SOT-26
DMP3056LDM-7 DMP3056LDM-7 Diodes Incorporated MOSFET P-CH 30V 4.3A SOT-26
DMP3008SFG-7 DMP3008SFG-7 Diodes Incorporated MOSFET P-CH 30V 8.6A POWERDI
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