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厂商	包装	系列	FET类型	FET功能	漏源极电压（Vdss）	电流-连续漏极（Id）（25°C时）	不同Id，Vgs时的RdsOn（最大值）	不同Id时的Vgs（th）（最大值）	不同Vgs时的栅极电荷（Qg）	不同Vds时的输入电容（Ciss）	功率-最大值	安装类型	封装/外壳	供应商器件封装

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器件名称	制造商	描述
TPCA8006-H(TE12L,Q	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 18A 8-SOPA
TK4A55DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 3.5A TO-220SIS
TK5A50D(Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 5A TO220SIS
TK4A60DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 3.5A TO220SIS
TPC8112(TE12L,Q)	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 13A SOP8 2-6J1B
TPC8117(TE12L,Q)	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 18A SOP8 2-6J1B
TK12A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 12A TO-220SIS
TPC8120(TE12L,Q,M)	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 18A 8SOP
TPC8A04-H(TE12L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH SBD 18A SOP8 2-6J1B
TK5A53D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 5A TO-220SIS
TK6A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 6A TO-220SIS
TK4A55D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 4A TO-220SIS
TK4A60DB(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 3.7A TO-220SIS
TK5A55D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 5A TO-220SIS
TK7A45DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 6.5A TO-220SIS
TK4A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 4A TO-220SIS
TK2A65D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 2A TO-220SIS
TK18E10K3,S1X(S	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 18A TO-220AB
TK6A55DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 5.5A TO-220SIS
TK6A53D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 6A TO-220SIS