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厂商	包装	系列	FET类型	FET功能	漏源极电压（Vdss）	电流-连续漏极（Id）（25°C时）	不同Id，Vgs时的RdsOn（最大值）	不同Id时的Vgs（th）（最大值）	不同Vgs时的栅极电荷（Qg）	不同Vds时的输入电容（Ciss）	功率-最大值	安装类型	封装/外壳	供应商器件封装

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器件名称	制造商	描述
TK60E08K3,S1X(S	Toshiba Semiconductor and Storage	MOSFET N-CH 75V 60A TO-220AB
TK8A55DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 7.5A TO-220SIS
TK8A60DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 7.5A TO-220SIS
TK11A45D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 11A TO-220SIS
TK50E06K3(S1SS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 50A TO-220AB
TK10A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 10A TO-220SIS
TK40E10K3,S1X(S	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 40A TO-220AB
TK15A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 15A TO-220SIS
TK7A60W,S4VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 7A TO-220SIS
2SK3387(TE24L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 150V 18A SC-97
2SK2777(TE24L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 6A TO-220SM
TK9A55DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 8.5A TO-220SIS
TK9A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 9A TO-220SIS
2SK2382(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 200V 15A TO220NIS
TK72E12N1,S1X	Toshiba Semiconductor and Storage	MOSFET N CH 120V 72A TO-220
TK50E10K3(S1SS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 50A TO-220AB
TK12X60U(TE24L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 12A TFP
2SK3879(TE24L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 6.5A TO220SM
2SK2884(TE24L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 5A TO220SM
TK11A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 11A TO-220SIS