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厂商	包装	系列	FET类型	FET功能	漏源极电压（Vdss）	电流-连续漏极（Id）（25°C时）	不同Id，Vgs时的RdsOn（最大值）	不同Id时的Vgs（th）（最大值）	不同Vgs时的栅极电荷（Qg）	不同Vds时的输入电容（Ciss）	功率-最大值	安装类型	封装/外壳	供应商器件封装

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器件名称	制造商	描述
TK7A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 7A TO-220SIS
TK56E12N1,S1X	Toshiba Semiconductor and Storage	MOSFET N CH 120V 56A TO-220
TPCA8039-H(TE12L,Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 34A 8SOIC ADV
TK3A65DA(STA4,QM)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 2.5A TO-220SIS
TK5A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 5A TO-220SIS
TK5A65DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 4.5A TO-220SIS
TK7A55D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 7A TO-220SIS
TK8A45D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 8A TO-220SIS
TK8A50DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 7.5A TO-220SIS
TK3A65D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 3A TO-220SIS
TK5A65D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 5A TO-220SIS
TK12A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 12A TO-220SIS
TK35E10K3(S1SS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 35A TO-220AB
TK50E08K3,S1X(S	Toshiba Semiconductor and Storage	MOSFET N-CH 75V 50A TO-220AB
TK8A45DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 7.5A TO-220SIS
TK50E06K3A,S1X(S	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 50A TO-220AB
TK4A65DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 3.5A TO-220SIS
2SK3758(Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 5A TO-220AB
TK9A45D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 9A TO-220SIS
2SK2991(TE24L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 5A TO220SM