FET - 单元器件大全_分立半导体产品-中电网

厂商	包装	系列	FET类型	FET功能	漏源极电压（Vdss）	电流-连续漏极（Id）（25°C时）	不同Id，Vgs时的RdsOn（最大值）	不同Id时的Vgs（th）（最大值）	不同Vgs时的栅极电荷（Qg）	不同Vds时的输入电容（Ciss）	功率-最大值	安装类型	封装/外壳	供应商器件封装

器件名称	制造商	描述
2SK3399(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 10A TO220FL
2SK3176(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 200V 30A TO-3PN
2SK3314(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 15A TO-3PN
TK20E60U,S1X(S	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-220AB
TK17J65U(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 17A TO-3PN
2SK3017(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 8.5A TO-3PN
2SK3936(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 23A TO-3PN
2SK3940(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 75V 70A TO-3PN
2SK3907(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 23A TO-3PN
2SK2267(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 60A TO-3P(L)
TK31E60W,S1VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 30.8A TO-220
TK31A60W,S4VX	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A TO-220SIS
2SK1381(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 50A TO-3PN
TK31J60W5,S1VQ	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A TO-3P(N)
TK50J60U(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 50A TO-3PN
2SK1382(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 60A TO-3PL
TPC8109(TE12L)	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 10A 8-SOP
TPC8109(TE12L)	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 10A 8-SOP
2SK3767(Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 2A TO-220SIS
TPCF8104(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 6A VS-8