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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
TPCF8B01(TE85L,F,M TPCF8B01(TE85L,F,M Toshiba Semiconductor and Storage MOSFET P-CH 20V 2.7A VS-8
TPCP8001-H(TE85LFM TPCP8001-H(TE85LFM Toshiba Semiconductor and Storage MOSFET N-CH 30V 7.2A PS-8
2SK3128(Q) 2SK3128(Q) Toshiba Semiconductor and Storage MOSFET N-CH 30V 60A TO-3PN
2SJ304(F) 2SJ304(F) Toshiba Semiconductor and Storage MOSFET P-CH 60V 14A TO220NIS
2SJ380(F) 2SJ380(F) Toshiba Semiconductor and Storage MOSFET P-CH 100V 12A TO220NIS
2SJ681(Q) 2SJ681(Q) Toshiba Semiconductor and Storage MOSFET P-CH 60V 5A PW-MOLD
2SK1119(F) 2SK1119(F) Toshiba Semiconductor and Storage MOSFET N-CH 1000V 4A TO-220AB
2SK2507(F) 2SK2507(F) Toshiba Semiconductor and Storage MOSFET N-CH 50V 25A TO220NIS
2SK2544(F) 2SK2544(F) Toshiba Semiconductor and Storage MOSFET N-CH 600V 6A TO-220AB
2SK2744(F) 2SK2744(F) Toshiba Semiconductor and Storage MOSFET N-CH 50V 45A TO-3PN
2SK2845(TE16L1,Q) 2SK2845(TE16L1,Q) Toshiba Semiconductor and Storage MOSFET N-CH 900V 1A DP
2SK2866(F) 2SK2866(F) Toshiba Semiconductor and Storage MOSFET N-CH 600V 10A TO-220AB
2SK3313(Q) 2SK3313(Q) Toshiba Semiconductor and Storage MOSFET N-CH 500V 12A TO220NIS
2SK3388(TE24L,Q) 2SK3388(TE24L,Q) Toshiba Semiconductor and Storage MOSFET N-CH 250V 20A SC-97
2SK3403(Q) 2SK3403(Q) Toshiba Semiconductor and Storage MOSFET N-CH 450V 13A TO220FL
2SK3466(TE24L,Q) 2SK3466(TE24L,Q) Toshiba Semiconductor and Storage MOSFET N-CH 500V 5A SC-97
2SK3844(Q) 2SK3844(Q) Toshiba Semiconductor and Storage MOSFET N-CH 60V 45A TO220NIS
2SK3868(Q,M) 2SK3868(Q,M) Toshiba Semiconductor and Storage MOSFET N-CH 500V 5A TO220SIS
2SK3906(Q) 2SK3906(Q) Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO-3PN
2SK4016(Q) 2SK4016(Q) Toshiba Semiconductor and Storage MOSFET N-CH 600V 13A TO220SIS
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