中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 857858859860861862863864865866867 1054
PDF 缩略图 器件名称 制造商 描述
TK20A25D,S5Q(M TK20A25D,S5Q(M Toshiba Semiconductor and Storage MOSFET N-CH 250V 20A TO-220SIS
TPC8A05-H(TE12L,QM TPC8A05-H(TE12L,QM Toshiba Semiconductor and Storage MOSFET N-CH SBD 30V 10A 8SOP
TPC8A06-H(TE12LQM) TPC8A06-H(TE12LQM) Toshiba Semiconductor and Storage MOSFET N-CH SBD 30V 12A 8SOP
SSM3K36FS(T5L,F,T) SSM3K36FS(T5L,F,T) Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.5A SSM
SSM3K36FS(T5L,F,T) SSM3K36FS(T5L,F,T) Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.5A SSM
SSM3K36FS(T5L,F,T) SSM3K36FS(T5L,F,T) Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.5A SSM
SSM3K302T(TE85L,F) SSM3K302T(TE85L,F) Toshiba Semiconductor and Storage MOSFET N-CH 30V 3A TSM
SSM3K302T(TE85L,F) SSM3K302T(TE85L,F) Toshiba Semiconductor and Storage MOSFET N-CH 30V 3A TSM
SSM3K302T(TE85L,F) SSM3K302T(TE85L,F) Toshiba Semiconductor and Storage MOSFET N-CH 30V 3A TSM
HCT7000M HCT7000M TT Electronics/Optek Technology MOSFET N-CH 60V 200MA SMD
HCT7000MTX HCT7000MTX TT Electronics/Optek Technology MOSFET N-CH 60V 200MA SMD
HCT7000MTXV HCT7000MTXV TT Electronics/Optek Technology MOSFET N-CH 60V 200MA SMD
PI5101-01-LGIZ PI5101-01-LGIZ Vicor Corporation MOSFET N-CH 5V 60A 3LGA
2N7002K-T1-E3 2N7002K-T1-E3 Vishay Siliconix MOSFET N-CH 60V 300MA SOT-23
2N7002K-T1-E3 2N7002K-T1-E3 Vishay Siliconix MOSFET N-CH 60V 300MA SOT-23
2N7002K-T1-E3 2N7002K-T1-E3 Vishay Siliconix MOSFET N-CH 60V 300MA SOT-23
SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3
SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3
SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3
SI2302CDS-T1-E3 SI2302CDS-T1-E3 Vishay Siliconix MOSFET N-CH 20V 2.6A SOT-23
1... 857858859860861862863864865866867 1054