中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 242243244245246247248249250251252 274
PDF 缩略图 器件名称 制造商 描述
SI4906DY-T1-E3 SI4906DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 6.6A 8-SOIC
SI4908DY-T1-E3 SI4908DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 5A 8-SOIC
SI4908DY-T1-E3 SI4908DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 5A 8-SOIC
SI4908DY-T1-E3 SI4908DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 5A 8-SOIC
SI4910DY-T1-E3 SI4910DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 7.6A 8-SOIC
SI4910DY-T1-E3 SI4910DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 7.6A 8-SOIC
SI4910DY-T1-E3 SI4910DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 7.6A 8-SOIC
SI4913DY-T1-E3 SI4913DY-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 7.1A 8-SOIC
SI4913DY-T1-E3 SI4913DY-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 7.1A 8-SOIC
SI4913DY-T1-E3 SI4913DY-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 7.1A 8-SOIC
SI4914DY-T1-E3 SI4914DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 5.5A 8-SOIC
SI4914DY-T1-E3 SI4914DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 5.5A 8-SOIC
SI4914DY-T1-E3 SI4914DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 5.5A 8-SOIC
SI4933DY-T1-E3 SI4933DY-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 7.4A 8-SOIC
SI4933DY-T1-E3 SI4933DY-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 7.4A 8-SOIC
SI4933DY-T1-E3 SI4933DY-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 7.4A 8-SOIC
SI4941EDY-T1-E3 SI4941EDY-T1-E3 Vishay Siliconix MOSFET 2P-CH 30V 10A 8-SOIC
SI4941EDY-T1-E3 SI4941EDY-T1-E3 Vishay Siliconix MOSFET 2P-CH 30V 10A 8-SOIC
SI4941EDY-T1-E3 SI4941EDY-T1-E3 Vishay Siliconix MOSFET 2P-CH 30V 10A 8-SOIC
SI4944DY-T1-E3 SI4944DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 9.3A 8-SOIC
1... 242243244245246247248249250251252 274