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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI1555DL-T1-E3 SI1555DL-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V/8V SC70-6
SI1555DL-T1-E3 SI1555DL-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V/8V SC70-6
SI1563DH-T1-E3 SI1563DH-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 1.13A SC70-6
SI1563DH-T1-E3 SI1563DH-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 1.13A SC70-6
SI1563DH-T1-E3 SI1563DH-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 1.13A SC70-6
SI1563EDH-T1-E3 SI1563EDH-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 1.13A SC70-6
SI1563EDH-T1-E3 SI1563EDH-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 1.13A SC70-6
SI1563EDH-T1-E3 SI1563EDH-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 1.13A SC70-6
SI1903DL-T1-E3 SI1903DL-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 0.41A SC70-6
SI1903DL-T1-E3 SI1903DL-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 0.41A SC70-6
SI1903DL-T1-E3 SI1903DL-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 0.41A SC70-6
SI1912EDH-T1-E3 SI1912EDH-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 1.13A SC70-6
SI1912EDH-T1-E3 SI1912EDH-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 1.13A SC70-6
SI1912EDH-T1-E3 SI1912EDH-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 1.13A SC70-6
SI1913DH-T1-E3 SI1913DH-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 0.88A SC70-6
SI1913DH-T1-E3 SI1913DH-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 0.88A SC70-6
SI1913DH-T1-E3 SI1913DH-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 0.88A SC70-6
SI1913EDH-T1-E3 SI1913EDH-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 0.88A SC70-6
SI1913EDH-T1-E3 SI1913EDH-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 0.88A SC70-6
SI1913EDH-T1-E3 SI1913EDH-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 0.88A SC70-6
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