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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIZ728DT-T1-GE3 SIZ728DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 16A 6-POWERPAIR
SIZ728DT-T1-GE3 SIZ728DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 16A 6-POWERPAIR
SIZ720DT-T1-GE3 SIZ720DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 16A POWERPAIR
SQ4284EY-T1-GE3 SQ4284EY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 8A 8SOIC
SI7214DN-T1-GE3 SI7214DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 4.6A 1212-8
SI7218DN-T1-GE3 SI7218DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 24A 1212-8
SQ4920EY-T1-GE3 SQ4920EY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8SO
SI4814BDY-T1-E3 SI4814BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 10A 8SOIC
SI4814BDY-T1-GE3 SI4814BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 10A 8SOIC
SI4916DY-T1-GE3 SI4916DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 10A 8-SOIC
SI4922BDY-T1-GE3 SI4922BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8-SOIC
SI4925BDY-T1-GE3 SI4925BDY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 5.3A 8-SOIC
SI4943CDY-T1-E3 SI4943CDY-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 8A 8-SOIC
SI4963BDY-T1-GE3 SI4963BDY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.9A 8SOIC
SI6975DQ-T1-GE3 SI6975DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.3A 8TSSOP
SI4388DY-T1-GE3 SI4388DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 10.7A 8-SOIC
SQJ951EP-T1-GE3 SQJ951EP-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 30A PPAK
SI4808DY-T1-E3 SI4808DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 5.7A 8SOIC
SI4808DY-T1-GE3 SI4808DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 5.7A 8SOIC
SQJ960EP-T1-GE3 SQJ960EP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 8A 8SO
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