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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIZ904DT-T1-GE3 SIZ904DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 12A POWERPAIR
SIZ904DT-T1-GE3 SIZ904DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 12A POWERPAIR
SIZ904DT-T1-GE3 SIZ904DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 12A POWERPAIR
SI4670DY-T1-GE3 SI4670DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8-SOIC
SI4670DY-T1-GE3 SI4670DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8-SOIC
SI4670DY-T1-GE3 SI4670DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8-SOIC
SI3948DV-T1-GE3 SI3948DV-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6-TSOP
SI7224DN-T1-E3 SI7224DN-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 6A PPAK 1212-8
SI4276DY-T1-E3 SI4276DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8SO
SI7270DP-T1-GE3 SI7270DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A PPAK SO-8
SIR770DP-T1-GE3 SIR770DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A PPAK SO-8
SQJ940EP-T1-GE3 SQJ940EP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 15A PPAK SO-8
SI4532ADY-T1-GE3 SI4532ADY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 3.7A 8-SOIC
SI4830CDY-T1-E3 SI4830CDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8-SOIC
SI4834CDY-T1-E3 SI4834CDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8SOIC
SQJ912AEP-T1-GE3 SQJ912AEP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 30A PPAK SO-8
SI4834CDY-T1-GE3 SI4834CDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8SOIC
SI4900DY-T1-GE3 SI4900DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 5.3A 8-SOIC
SI5944DU-T1-GE3 SI5944DU-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 6A 8PWRPAK
SI4936BDY-T1-GE3 SI4936BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6.9A 8-SOIC
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