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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIB914DK-T1-GE3 SIB914DK-T1-GE3 Vishay Siliconix MOSFET 2N-CH 8V 1.5A PPAK SC75-6
SIB914DK-T1-GE3 SIB914DK-T1-GE3 Vishay Siliconix MOSFET 2N-CH 8V 1.5A PPAK SC75-6
SI4388DY-T1-E3 SI4388DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 10.7A 8-SOIC
SI4388DY-T1-E3 SI4388DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 10.7A 8-SOIC
SI4388DY-T1-E3 SI4388DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 10.7A 8-SOIC
SI1539DL-T1-GE3 SI1539DL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V SC70-6
SI1539DL-T1-GE3 SI1539DL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V SC70-6
SI1539DL-T1-GE3 SI1539DL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V SC70-6
SI1905DL-T1-E3 SI1905DL-T1-E3 Vishay Siliconix MOSFET 2P-CH 8V 0.57A SC70-6
SI1905DL-T1-E3 SI1905DL-T1-E3 Vishay Siliconix MOSFET 2P-CH 8V 0.57A SC70-6
SI1905DL-T1-E3 SI1905DL-T1-E3 Vishay Siliconix MOSFET 2P-CH 8V 0.57A SC70-6
SI4539ADY-T1-E3 SI4539ADY-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 4.4A 8-SOIC
SI4539ADY-T1-E3 SI4539ADY-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 4.4A 8-SOIC
SI4539ADY-T1-E3 SI4539ADY-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 4.4A 8-SOIC
SI4501BDY-T1-GE3 SI4501BDY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V/8V 8SOIC
SI4501BDY-T1-GE3 SI4501BDY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V/8V 8SOIC
SI4501BDY-T1-GE3 SI4501BDY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V/8V 8SOIC
SI4511DY-T1-GE3 SI4511DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 7.2A 8-SOIC
SI4511DY-T1-GE3 SI4511DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 7.2A 8-SOIC
SI4511DY-T1-GE3 SI4511DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 7.2A 8-SOIC
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