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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI3552DV-T1-GE3 SI3552DV-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 6-TSOP
SI3552DV-T1-GE3 SI3552DV-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 6-TSOP
SI3552DV-T1-GE3 SI3552DV-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 6-TSOP
SI6913DQ-T1-E3 SI6913DQ-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 4.9A 8TSSOP
SI6913DQ-T1-E3 SI6913DQ-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 4.9A 8TSSOP
SI6913DQ-T1-E3 SI6913DQ-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 4.9A 8TSSOP
SI7252DP-T1-GE3 SI7252DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 36.7A PPAK 8SO
SI7252DP-T1-GE3 SI7252DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 36.7A PPAK 8SO
SI7252DP-T1-GE3 SI7252DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 36.7A PPAK 8SO
SI7942DP-T1-E3 SI7942DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 100V 3.8A PPAK SO-8
SI7942DP-T1-E3 SI7942DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 100V 3.8A PPAK SO-8
SI7942DP-T1-E3 SI7942DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 100V 3.8A PPAK SO-8
SIB912DK-T1-GE3 SIB912DK-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 1.5A SC-75-6
SIB912DK-T1-GE3 SIB912DK-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 1.5A SC-75-6
SIB912DK-T1-GE3 SIB912DK-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 1.5A SC-75-6
SI1902DL-T1-GE3 SI1902DL-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 0.66A SC-70-6
SI1902DL-T1-GE3 SI1902DL-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 0.66A SC-70-6
SI1902DL-T1-GE3 SI1902DL-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 0.66A SC-70-6
SIA537EDJ-T1-GE3 SIA537EDJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V/20V SC-70-6L
SIA537EDJ-T1-GE3 SIA537EDJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V/20V SC-70-6L
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