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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIA923EDJ-T1-GE3 SIA923EDJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC-70-6
SIA923EDJ-T1-GE3 SIA923EDJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC-70-6
SI4816BDY-T1-E3 SI4816BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 5.8A 8-SOIC
SI4816BDY-T1-E3 SI4816BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 5.8A 8-SOIC
SI4816BDY-T1-E3 SI4816BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 5.8A 8-SOIC
SI7913DN-T1-GE3 SI7913DN-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 5A PPAK 1212-8
SI7913DN-T1-GE3 SI7913DN-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 5A PPAK 1212-8
SI7913DN-T1-GE3 SI7913DN-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 5A PPAK 1212-8
SI7913DN-T1-E3 SI7913DN-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 5A 1212-8
SI7913DN-T1-E3 SI7913DN-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 5A 1212-8
SI7913DN-T1-E3 SI7913DN-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 5A 1212-8
SI7922DN-T1-E3 SI7922DN-T1-E3 Vishay Siliconix MOSFET 2N-CH 100V 1.8A 1212-8
SI7922DN-T1-E3 SI7922DN-T1-E3 Vishay Siliconix MOSFET 2N-CH 100V 1.8A 1212-8
SI7922DN-T1-E3 SI7922DN-T1-E3 Vishay Siliconix MOSFET 2N-CH 100V 1.8A 1212-8
SI7922DN-T1-GE3 SI7922DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 1.8A 1212-8
SI7922DN-T1-GE3 SI7922DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 1.8A 1212-8
SI7922DN-T1-GE3 SI7922DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 1.8A 1212-8
SI7220DN-T1-E3 SI7220DN-T1-E3 Vishay Siliconix MOSFET 2N-CH 60V 3.4A 1212-8
SI7220DN-T1-E3 SI7220DN-T1-E3 Vishay Siliconix MOSFET 2N-CH 60V 3.4A 1212-8
SI7220DN-T1-E3 SI7220DN-T1-E3 Vishay Siliconix MOSFET 2N-CH 60V 3.4A 1212-8
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