中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 219220221222223224225226227228229 274
PDF 缩略图 器件名称 制造商 描述
SI4214DDY-T1-GE3 SI4214DDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8.5A 8-SOIC
SI4214DDY-T1-GE3 SI4214DDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8.5A 8-SOIC
SI6954ADQ-T1-GE3 SI6954ADQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 3.1A 8TSSOP
SI6954ADQ-T1-GE3 SI6954ADQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 3.1A 8TSSOP
SI6954ADQ-T1-GE3 SI6954ADQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 3.1A 8TSSOP
SI4804CDY-T1-GE3 SI4804CDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8SOIC
SI4804CDY-T1-GE3 SI4804CDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8SOIC
SI4804CDY-T1-GE3 SI4804CDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8SOIC
SI6926ADQ-T1-E3 SI6926ADQ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 4.1A 8TSSOP
SI6926ADQ-T1-E3 SI6926ADQ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 4.1A 8TSSOP
SI6926ADQ-T1-E3 SI6926ADQ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 4.1A 8TSSOP
SI5515CDC-T1-GE3 SI5515CDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 4A 1206-8
SI5515CDC-T1-GE3 SI5515CDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 4A 1206-8
SI5515CDC-T1-GE3 SI5515CDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 4A 1206-8
SI5504BDC-T1-GE3 SI5504BDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 4A 1206-8
SI5504BDC-T1-GE3 SI5504BDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 4A 1206-8
SI5504BDC-T1-GE3 SI5504BDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 4A 1206-8
SI4916DY-T1-E3 SI4916DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 10A 8-SOIC
SI4916DY-T1-E3 SI4916DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 10A 8-SOIC
SI4916DY-T1-E3 SI4916DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 10A 8-SOIC
1... 219220221222223224225226227228229 274