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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7234DP-T1-GE3 SI7234DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 12V 60A PPAK SO-8
SI7234DP-T1-GE3 SI7234DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 12V 60A PPAK SO-8
SI7234DP-T1-GE3 SI7234DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 12V 60A PPAK SO-8
SI1539CDL-T1-GE3 SI1539CDL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V SOT363
SI1539CDL-T1-GE3 SI1539CDL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V SOT363
SI1539CDL-T1-GE3 SI1539CDL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V SOT363
SI1902DL-T1-E3 SI1902DL-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 0.66A SC70-6
SI1902DL-T1-E3 SI1902DL-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 0.66A SC70-6
SI1902DL-T1-E3 SI1902DL-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 0.66A SC70-6
SI1967DH-T1-GE3 SI1967DH-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 1.3A SC70-6
SI1967DH-T1-GE3 SI1967DH-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 1.3A SC70-6
SI1967DH-T1-GE3 SI1967DH-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 1.3A SC70-6
SI1023X-T1-GE3 SI1023X-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 0.37A SC89-6
SI1023X-T1-GE3 SI1023X-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 0.37A SC89-6
SI1023X-T1-GE3 SI1023X-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 0.37A SC89-6
SI1034X-T1-GE3 SI1034X-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 0.18A SC89-6
SI1034X-T1-GE3 SI1034X-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 0.18A SC89-6
SI1034X-T1-GE3 SI1034X-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 0.18A SC89-6
SIA922EDJ-T1-GE3 SIA922EDJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 4.5A SC70-6
SIA922EDJ-T1-GE3 SIA922EDJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 4.5A SC70-6
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