中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 218219220221222223224225226227228 274
PDF 缩略图 器件名称 制造商 描述
SIA922EDJ-T1-GE3 SIA922EDJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 4.5A SC70-6
SIA931DJ-T1-GE3 SIA931DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 4.5A SC70-6L
SIA931DJ-T1-GE3 SIA931DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 4.5A SC70-6L
SIA931DJ-T1-GE3 SIA931DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 4.5A SC70-6L
SIA527DJ-T1-GE3 SIA527DJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC-70-6
SIA527DJ-T1-GE3 SIA527DJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC-70-6
SIA527DJ-T1-GE3 SIA527DJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC-70-6
SIA914ADJ-T1-GE3 SIA914ADJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC70-6L
SIA914ADJ-T1-GE3 SIA914ADJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC70-6L
SIA914ADJ-T1-GE3 SIA914ADJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC70-6L
SI6968BEDQ-T1-GE3 SI6968BEDQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 5.2A 8-TSSOP
SI6968BEDQ-T1-GE3 SI6968BEDQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 5.2A 8-TSSOP
SI6968BEDQ-T1-GE3 SI6968BEDQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 5.2A 8-TSSOP
SI5999EDU-T1-GE3 SI5999EDU-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 6A POWERPAK
SI5999EDU-T1-GE3 SI5999EDU-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 6A POWERPAK
SI5999EDU-T1-GE3 SI5999EDU-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 6A POWERPAK
SI5936DU-T1-GE3 SI5936DU-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6A PWRPK CHPFET
SI5936DU-T1-GE3 SI5936DU-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6A PWRPK CHPFET
SI5936DU-T1-GE3 SI5936DU-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6A PWRPK CHPFET
SI4214DDY-T1-GE3 SI4214DDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8.5A 8-SOIC
1... 218219220221222223224225226227228 274