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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI5515DC-T1-E3 SI5515DC-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 4.4A 1206-8
SI5515DC-T1-E3 SI5515DC-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 4.4A 1206-8
SI5515DC-T1-E3 SI5515DC-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 4.4A 1206-8
SI4286DY-T1-GE3 SI4286DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 7A 8SO
SI4286DY-T1-GE3 SI4286DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 7A 8SO
SI4286DY-T1-GE3 SI4286DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 7A 8SO
SI1024X-T1-GE3 SI1024X-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 0.485A SC89-6
SI1024X-T1-GE3 SI1024X-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 0.485A SC89-6
SI1024X-T1-GE3 SI1024X-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 0.485A SC89-6
SI4559ADY-T1-GE3 SI4559ADY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 60V 5.3A 8-SOIC
SI4559ADY-T1-GE3 SI4559ADY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 60V 5.3A 8-SOIC
SI4559ADY-T1-GE3 SI4559ADY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 60V 5.3A 8-SOIC
SI7212DN-T1-GE3 SI7212DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 4.9A 1212-8
SI7212DN-T1-GE3 SI7212DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 4.9A 1212-8
SI7212DN-T1-GE3 SI7212DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 4.9A 1212-8
SI4948BEY-T1-GE3 SI4948BEY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 60V 2.4A 8-SOIC
SI4948BEY-T1-GE3 SI4948BEY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 60V 2.4A 8-SOIC
SI4948BEY-T1-GE3 SI4948BEY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 60V 2.4A 8-SOIC
SI5908DC-T1-GE3 SI5908DC-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.4A 1206-8
SI5908DC-T1-GE3 SI5908DC-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.4A 1206-8
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