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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIA537EDJ-T1-GE3 SIA537EDJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V/20V SC-70-6L
SI4228DY-T1-GE3 SI4228DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8-SOIC
SI4228DY-T1-GE3 SI4228DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8-SOIC
SI4228DY-T1-GE3 SI4228DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8-SOIC
SIS990DN-T1-GE3 SIS990DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 12.1A 1212-8
SIS990DN-T1-GE3 SIS990DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 12.1A 1212-8
SIS990DN-T1-GE3 SIS990DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 12.1A 1212-8
SI7904BDN-T1-GE3 SI7904BDN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 6A PPAK 1212-8
SI7904BDN-T1-GE3 SI7904BDN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 6A PPAK 1212-8
SI7904BDN-T1-GE3 SI7904BDN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 6A PPAK 1212-8
SI7224DN-T1-GE3 SI7224DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6A PPAK 1212-8
SI7224DN-T1-GE3 SI7224DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6A PPAK 1212-8
SI7224DN-T1-GE3 SI7224DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6A PPAK 1212-8
SI5933CDC-T1-GE3 SI5933CDC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 3.7A 1206-8
SI5933CDC-T1-GE3 SI5933CDC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 3.7A 1206-8
SI5933CDC-T1-GE3 SI5933CDC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 3.7A 1206-8
SI1965DH-T1-GE3 SI1965DH-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 1.3A SC70-6
SI1965DH-T1-GE3 SI1965DH-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 1.3A SC70-6
SI1965DH-T1-GE3 SI1965DH-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 1.3A SC70-6
SIZ902DT-T1-GE3 SIZ902DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A POWERPAIR
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