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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIA917DJ-T1-GE3 SIA917DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SIA917DJ-T1-GE3 SIA917DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SIA917DJ-T1-GE3 SIA917DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SI4563DY-T1-E3 SI4563DY-T1-E3 Vishay Siliconix MOSFET N/P-CH 40V 8A 8-SOIC
SI4563DY-T1-E3 SI4563DY-T1-E3 Vishay Siliconix MOSFET N/P-CH 40V 8A 8-SOIC
SI4563DY-T1-E3 SI4563DY-T1-E3 Vishay Siliconix MOSFET N/P-CH 40V 8A 8-SOIC
SI3586DV-T1-E3 SI3586DV-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 2.9A 6TSOP
SI3586DV-T1-E3 SI3586DV-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 2.9A 6TSOP
SI3586DV-T1-E3 SI3586DV-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 2.9A 6TSOP
SI4567DY-T1-E3 SI4567DY-T1-E3 Vishay Siliconix MOSFET N/P-CH 40V 5A 8-SOIC
SI4567DY-T1-E3 SI4567DY-T1-E3 Vishay Siliconix MOSFET N/P-CH 40V 5A 8-SOIC
SI4567DY-T1-E3 SI4567DY-T1-E3 Vishay Siliconix MOSFET N/P-CH 40V 5A 8-SOIC
SI1917EDH-T1-E3 SI1917EDH-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 1A SC70-6
SI1917EDH-T1-E3 SI1917EDH-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 1A SC70-6
SI1917EDH-T1-E3 SI1917EDH-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 1A SC70-6
SI5902DC-T1-E3 SI5902DC-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 2.9A 1206-8
SI5902DC-T1-E3 SI5902DC-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 2.9A 1206-8
SI5902DC-T1-E3 SI5902DC-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 2.9A 1206-8
SI5947DU-T1-GE3 SI5947DU-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 6A PPAK CHIPFET
SI5947DU-T1-GE3 SI5947DU-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 6A PPAK CHIPFET
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