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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIZ710DT-T1-GE3 SIZ710DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 16A POWERPAIR
SIA923AEDJ-T1-GE3 SIA923AEDJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6L
SIA923AEDJ-T1-GE3 SIA923AEDJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6L
SIA923AEDJ-T1-GE3 SIA923AEDJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6L
SIZ790DT-T1-GE3 SIZ790DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A 6-POWERPAIR
SIZ790DT-T1-GE3 SIZ790DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A 6-POWERPAIR
SIZ790DT-T1-GE3 SIZ790DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A 6-POWERPAIR
SIZ900DT-T1-GE3 SIZ900DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 24A POWERPAIR
SIZ900DT-T1-GE3 SIZ900DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 24A POWERPAIR
SIZ900DT-T1-GE3 SIZ900DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 24A POWERPAIR
SIZ300DT-T1-GE3 SIZ300DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 11A POWERPAIR
SIZ300DT-T1-GE3 SIZ300DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 11A POWERPAIR
SIZ300DT-T1-GE3 SIZ300DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 11A POWERPAIR
SIZ914DT-T1-GE3 SIZ914DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A PWRPAIR
SIZ914DT-T1-GE3 SIZ914DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A PWRPAIR
SIZ914DT-T1-GE3 SIZ914DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A PWRPAIR
SI1539DL-T1-E3 SI1539DL-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V SC70-6
SI1539DL-T1-E3 SI1539DL-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V SC70-6
SI1539DL-T1-E3 SI1539DL-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V SC70-6
SIB914DK-T1-GE3 SIB914DK-T1-GE3 Vishay Siliconix MOSFET 2N-CH 8V 1.5A PPAK SC75-6
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