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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI5947DU-T1-GE3 SI5947DU-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 6A PPAK CHIPFET
SI7960DP-T1-GE3 SI7960DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 6.2A PPAK SO-8
SI7960DP-T1-GE3 SI7960DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 6.2A PPAK SO-8
SI7960DP-T1-GE3 SI7960DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 6.2A PPAK SO-8
SI7960DP-T1-E3 SI7960DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 60V 6.2A PPAK SO-8
SI7960DP-T1-E3 SI7960DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 60V 6.2A PPAK SO-8
SI7960DP-T1-E3 SI7960DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 60V 6.2A PPAK SO-8
SI6562DQ-T1-E3 SI6562DQ-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 8-TSSOP
SI6562DQ-T1-E3 SI6562DQ-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 8-TSSOP
SI7946DP-T1-E3 SI7946DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 150V 2.1A PPAK SO-8
SI7946DP-T1-E3 SI7946DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 150V 2.1A PPAK SO-8
SI7946DP-T1-E3 SI7946DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 150V 2.1A PPAK SO-8
SI5504BDC-T1-E3 SI5504BDC-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 4A 1206-8
SQ9945BEY-T1-GE3 SQ9945BEY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 5.4A 8SOIC
SQ4940AEY-T1-GE3 SQ4940AEY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 8A 8SOIC
SQJ844AEP-T1_GE3 SQJ844AEP-T1_GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A PPAK SO-8
SI5515DC-T1-GE3 SI5515DC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 4.4A 1206-8
SIZ704DT-T1-GE3 SIZ704DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 12A PPAK 1212-8
SIZ704DT-T1-GE3 SIZ704DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 12A PPAK 1212-8
SIZ704DT-T1-GE3 SIZ704DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 12A PPAK 1212-8
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