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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4276DY-T1-GE3 SI4276DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8-SOIC
SI4276DY-T1-GE3 SI4276DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8-SOIC
SI4276DY-T1-GE3 SI4276DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8-SOIC
SI6925ADQ-T1-GE3 SI6925ADQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 3.3A 8-TSSOP
SI6925ADQ-T1-GE3 SI6925ADQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 3.3A 8-TSSOP
SI6925ADQ-T1-GE3 SI6925ADQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 3.3A 8-TSSOP
SI8900EDB-T2-E1 SI8900EDB-T2-E1 Vishay Siliconix MOSFET 2N-CH 20V 5.4A 10-MFP
SI8900EDB-T2-E1 SI8900EDB-T2-E1 Vishay Siliconix MOSFET 2N-CH 20V 5.4A 10-MFP
SI8900EDB-T2-E1 SI8900EDB-T2-E1 Vishay Siliconix MOSFET 2N-CH 20V 5.4A 10-MFP
SI7236DP-T1-E3 SI7236DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 60A PWRPAK SO-8
SI7956DP-T1-E3 SI7956DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI7956DP-T1-E3 SI7956DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI7956DP-T1-E3 SI7956DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI7962DP-T1-E3 SI7962DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 7.1A PPAK SO-8
SI7962DP-T1-E3 SI7962DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 7.1A PPAK SO-8
SI7962DP-T1-E3 SI7962DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 7.1A PPAK SO-8
SMMA511DJ-T1-GE3 SMMA511DJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC70-6L
SMMB911DK-T1-GE3 SMMB911DK-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 2.6A SC75-6L
VQ1001P VQ1001P Vishay Siliconix MOSFET 4N-CH 30V 0.83A 14DIP
VQ1001P-E3 VQ1001P-E3 Vishay Siliconix MOSFET 4N-CH 30V 0.83A 14DIP
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