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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4936ADY-T1-GE3 SI4936ADY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 4.4A 8-SOIC
SI4943BDY-T1-GE3 SI4943BDY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 6.3A 8-SOIC
SI7905DN-T1-E3 SI7905DN-T1-E3 Vishay Siliconix MOSFET 2P-CH 40V 6A 1212-8
SI7872DP-T1-E3 SI7872DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 6.4A PPAK SO-8
SI7872DP-T1-E3 SI7872DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 6.4A PPAK SO-8
SI7872DP-T1-E3 SI7872DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 6.4A PPAK SO-8
SI7872DP-T1-GE3 SI7872DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6.4A PPAK SO-8
SI7872DP-T1-GE3 SI7872DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6.4A PPAK SO-8
SI7872DP-T1-GE3 SI7872DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6.4A PPAK SO-8
SI4622DY-T1-E3 SI4622DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8-SOIC
SI4966DY-T1-GE3 SI4966DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 8SOIC
SI4563DY-T1-GE3 SI4563DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 8A 8-SOIC
SI4618DY-T1-GE3 SI4618DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8SO
SI7212DN-T1-E3 SI7212DN-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 4.9A 1212-8
SI7212DN-T1-E3 SI7212DN-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 4.9A 1212-8
SI7212DN-T1-E3 SI7212DN-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 4.9A 1212-8
SI7958DP-T1-GE3 SI7958DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 7.2A PPAK SO-8
SI7958DP-T1-GE3 SI7958DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 7.2A PPAK SO-8
SI7958DP-T1-GE3 SI7958DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 7.2A PPAK SO-8
SI6975DQ-T1-E3 SI6975DQ-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 4.3A 8TSSOP
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