中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 232233234235236237238239240241242 274
PDF 缩略图 器件名称 制造商 描述
SI5902BDC-T1-E3 SI5902BDC-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 4A 1206-8
SI9926CDY-T1-E3 SI9926CDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 8A 8-SOIC
SQ4946AEY-T1-GE3 SQ4946AEY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 7A 8SOIC
SI1551DL-T1-E3 SI1551DL-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V SC70-6
SI1551DL-T1-E3 SI1551DL-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V SC70-6
SI1551DL-T1-E3 SI1551DL-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V SC70-6
SI4505DY-T1-E3 SI4505DY-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V/8V 8-SOIC
SI4505DY-T1-GE3 SI4505DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V/8V 8-SOIC
SI4914BDY-T1-E3 SI4914BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 8.4A 8-SOIC
SUD50NP04-77P-T4E3 SUD50NP04-77P-T4E3 Vishay Siliconix MOSFET N/P-CH 40V 8A TO252-4
SI4932DY-T1-GE3 SI4932DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8-SOIC
SIZ730DT-T1-GE3 SIZ730DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A 6-POWERPAIR
SIZ730DT-T1-GE3 SIZ730DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A 6-POWERPAIR
SIZ730DT-T1-GE3 SIZ730DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A 6-POWERPAIR
SI4226DY-T1-GE3 SI4226DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8-SOIC
SI4226DY-T1-GE3 SI4226DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8-SOIC
SI4226DY-T1-GE3 SI4226DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8-SOIC
SI4226DY-T1-E3 SI4226DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8SOIC
SIZ700DT-T1-GE3 SIZ700DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 16A PPAK 1212-8
SIZ728DT-T1-GE3 SIZ728DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 16A 6-POWERPAIR
1... 232233234235236237238239240241242 274