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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI3948DV-T1-E3 SI3948DV-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 6-TSOP
SI3948DV-T1-E3 SI3948DV-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 6-TSOP
SI3948DV-T1-E3 SI3948DV-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 6-TSOP
SI3951DV-T1-E3 SI3951DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 2.7A 6-TSOP
SI3951DV-T1-E3 SI3951DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 2.7A 6-TSOP
SI3951DV-T1-E3 SI3951DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 2.7A 6-TSOP
SI3981DV-T1-E3 SI3981DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 1.6A 6-TSOP
SI3981DV-T1-E3 SI3981DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 1.6A 6-TSOP
SI3981DV-T1-E3 SI3981DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 1.6A 6-TSOP
SI3983DV-T1-E3 SI3983DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 2.1A 6-TSOP
SI3983DV-T1-E3 SI3983DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 2.1A 6-TSOP
SI3983DV-T1-E3 SI3983DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 2.1A 6-TSOP
SI4330DY-T1-E3 SI4330DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 6.6A 8-SOIC
SI4330DY-T1-E3 SI4330DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 6.6A 8-SOIC
SI4330DY-T1-E3 SI4330DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 6.6A 8-SOIC
SI4340DY-T1-E3 SI4340DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 7.3A 14SO
SI4340DY-T1-E3 SI4340DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 7.3A 14SO
SI4340DY-T1-E3 SI4340DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 7.3A 14SO
SI4500BDY-T1-E3 SI4500BDY-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 6.6A 8SOIC
SI4500BDY-T1-E3 SI4500BDY-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 6.6A 8SOIC
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