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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7236DP-T1-GE3 SI7236DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 60A PPAK SO-8
SI7236DP-T1-GE3 SI7236DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 60A PPAK SO-8
SI7236DP-T1-GE3 SI7236DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 60A PPAK SO-8
SIA913ADJ-T1-GE3 SIA913ADJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.5A SC70-6
SIA913ADJ-T1-GE3 SIA913ADJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.5A SC70-6
SIA913ADJ-T1-GE3 SIA913ADJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.5A SC70-6
SI4914BDY-T1-GE3 SI4914BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8.4A 8-SOIC
SI4914BDY-T1-GE3 SI4914BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8.4A 8-SOIC
SI4914BDY-T1-GE3 SI4914BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8.4A 8-SOIC
SI7980DP-T1-GE3 SI7980DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 8A PPAK SO-8
SI7980DP-T1-GE3 SI7980DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 8A PPAK SO-8
SI7980DP-T1-GE3 SI7980DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 8A PPAK SO-8
SIZ918DT-T1-GE3 SIZ918DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A POWERPAIR
SIZ918DT-T1-GE3 SIZ918DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A POWERPAIR
SIZ918DT-T1-GE3 SIZ918DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A POWERPAIR
SI6968BEDQ-T1-E3 SI6968BEDQ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 5.2A 8TSSOP
SI6968BEDQ-T1-E3 SI6968BEDQ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 5.2A 8TSSOP
SI6968BEDQ-T1-E3 SI6968BEDQ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 5.2A 8TSSOP
SIZ710DT-T1-GE3 SIZ710DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 16A POWERPAIR
SIZ710DT-T1-GE3 SIZ710DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 16A POWERPAIR
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